onsemi P-Channel MOSFET 180 mA, 50 V Enhancement 3-Pin SOT-23 BSS84AK,215

Nexperia BSS84AK,215 is a P-Channel enhancement mode MOSFET featuring 180 mA maximum continuous drain current and 50 V maximum drain-source voltage. This device is housed in a 3-pin SOT-23 surface-mount package, providing compact form factor and easy PCB integration. It is designed for power management and switching applications requiring low on-resistance and reliable operation.

The MOSFET employs an enhancement mode channel with a maximum drain-source resistance of 7.5 Ω, suitable for efficient and fast switching in electronic circuits. It can safely dissipate 420 mW of power and operates over a wide temperature range from -55°C up to 150°C, making it appropriate for both commercial and automotive electronics that demand durability and thermal endurance.

Its gate can withstand a maximum source voltage of ±20 V with a typical gate charge of 0.26 nC, facilitating high-speed switching and low switching losses. The forward voltage drop of 1.1 V ensures efficient conduction under rated loads.

The device dimensions are compact, with length 3 mm, width 1.4 mm, and height 1 mm, enabling dense PCB layouts. This MOSFET is built to the automotive standard AEC-Q101, underscoring its quality and reliability for automotive grade applications.

P-Channel MOSFETs like the BSS84AK,215 are widely used in power management, load switching, and driver circuits across industrial, automotive, consumer electronics, and laboratory equipment domains.

This MOSFET features an enhancement mode channel optimized for efficient switching. Surface mounting type ensures compatibility with modern PCB assembly processes. The device can dissipate up to 420 mW of power safely under operating conditions.

Designed with automotive standard AEC-Q101 qualification for high reliability. Wide operating temperature range from -55°C to 150°C supports demanding environments. Maximum gate-source voltage is ±20 V, ensuring robust gate control.

Typical gate charge is 0.26 nC at given gate voltage, aiding in fast switching applications. Forward voltage of 1.1 V supports efficient conduction. Compact dimensions of length 3 mm, width 1.4 mm, and height 1 mm allow space-saving designs.

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