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onsemi P-Channel MOSFET, 150 mA, 50 V Enhancement, 3-Pin SC-70 Package, Surface Mount BSS84AKW,115

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onsemi P-Channel MOSFET, 150 mA, 50 V Enhancement, 3-Pin SC-70 Package, Surface Mount BSS84AKW,115

Name: onsemi P-Channel MOSFET, 150 mA, 50 V Enhancement, 3-Pin SC-70 Package, Surface Mount BSS84AKW,115
Brand: onsemi
SKU: 371464
Price: 0.05 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	2.2mm
Model	BSS84AKW,115
Width	1.35mm
Mount Type	Surface
Series	BSS84AKW
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	150mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	7.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	310mW
Typical Gate Charge Qg @ Vgs	0.26nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.1V

Key Features

Type P channel enhancing MOSFET suitable for low power switching applications.
Maximum continuous drain current of 150 mA with low on resistance of 7.5 ohms.
Operates with a maximum drain source voltage of 50 V and gate source voltage of ±20 V.
Low typical gate charge of 0.26 nC ensuring fast switching performance.
Compact SC-70 package with dimensions approximately 2.2 mm length, 1.35 mm width, and 1 mm height.
Maximum power dissipation of 310 mW supports efficient thermal handling.
Wide operating temperature range from -55°C to 150°C, meeting AEC-Q101 automotive standard.
Designed for surface mount technology with 3 pins for easy PCB integration.

Product Description

Nexperia BSS84AKW,115 is a P-Channel enhancement mode MOSFET designed for low power switching applications. Featuring a maximum continuous drain current of 150 mA and a maximum drain source voltage of 50 V, it ensures reliable operation in compact electronic circuits.

This transistor uses a 3-pin SC-70 surface mount package, offering a small footprint with precise dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height. Its low on-resistance of 7.5 ohms allows efficient conduction with minimal power losses.

The device has a typical gate charge of 0.26 nC at the gate-to-source voltage, enabling fast switching frequencies. It operates within a wide temperature range of -55°C to 150°C, complying with automotive standard AEC-Q101, thus suitable for automotive and industrial applications.

Surface mounting capabilities simplify PCB assembly, making it ideal for consumer electronics, industrial controls, automotive electronics, and HVAC systems. The maximum power dissipation is rated at 310 mW, balancing performance and thermal management in compact designs.

Type P channel enhancing MOSFET suitable for low power switching applications. Maximum continuous drain current of 150 mA with low on resistance of 7.5 ohms. Operates with maximum drain source voltage of 50 V and gate source voltage of ±20 V.

Low typical gate charge of 0.26 nC ensuring fast switching. Compact SC-70 package with precise mechanical dimensions. Maximum power dissipation of 310 mW for thermal reliability. Wide temperature operating range from -55°C to 150°C, meeting automotive standards.

Surface mount construction with 3 pins for easy PCB integration.

This MOSFET is widely used in semiconductor discrete device applications within electronics manufacturing, automotive circuit design, and power management modules. Its small size and electrical characteristics make it a versatile choice for designers.

Discover more Nexperia semiconductor products and electronics components in the EnvMart catalog to suit your industrial, automotive, and electronic circuit needs.