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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD80N4F6 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | DeepGate, STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
STMicroelectronics STD80N4F6 DeepGate STripFET N-Channel MOSFET is a high-performance transistor designed to deliver efficient power switching in electronic applications requiring robust current handling and low on-resistance. This device supports a maximum continuous drain current of 80 amperes and a drain-source voltage up to 40 volts, making it suitable for demanding power management tasks.
The MOSFET employs DeepGate STripFET technology, offering ultra-low gate charge, which enhances switching efficiency and reduces energy loss. The 3-pin TO-252 surface mount package enables compact integration in modern circuit boards.
With a maximum drain-source resistance of 6 milliohms and a maximum power dissipation of 70 watts, this MOSFET provides reliable performance in power conversion, motor control, automotive electronics, industrial equipment, and HVAC systems. Its operating temperature range from -55°C to 175°C ensures stable operation in harsh environments.
Additional features include a typical gate charge of 36 nC and forward voltage of 1.3 V, providing predictable and efficient control characteristics. The device is qualified to the automotive-grade AEC-Q101 standard, confirming suitability for automotive applications.
The device features ultra-low gate charge for efficient switching. It exhibits a maximum drain-source resistance of 6 milliohms in enhancement mode. Maximum power dissipation is rated at 70 watts. Operating temperature range spans from -55°C to 175°C.
The MOSFET is suitable for surface mount with a 3-pin configuration. Typical gate charge is 36 nanocoulombs at specified gate voltage. The package dimensions are 6.6 mm length, 6.2 mm width, and 2.4 mm height. The device meets Automotive Standard AEC-Q101.
This MOSFET is commonly utilized in industrial, automotive, power supply, and manufacturing sectors where efficient high-current switching is critical. Its compact design and robust specifications ensure long-term reliability and ease of integration.
Explore detailed STMicroelectronics product selections and electronic components at EnvMart to support your design and manufacturing needs.
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