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STMicroelectronics DeepGate STripFET N-Channel MOSFET 80A 40V Enhancement 3-Pin TO-252 STD80N4F6

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STD80N4F6
Width 6.2mm
Mount Type Surface
Series DeepGate, STripFET
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 80A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 70W
Typical Gate Charge Qg @ Vgs 36nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • The device features ultra-low gate charge for efficient switching.
  • It exhibits a maximum drain-source resistance of 6 milliohms in enhancement mode.
  • Maximum power dissipation is rated at 70 watts.
  • Operating temperature range spans from -55°C to 175°C.
  • The MOSFET is suitable for surface mount with a 3-pin configuration.
  • Typical gate charge is 36 nanocoulombs at specified gate voltage.
  • The package dimensions are 6.6 mm length, 6.2 mm width, and 2.4 mm height.
  • The device meets Automotive Standard AEC-Q101.

Product Description

STMicroelectronics STD80N4F6 DeepGate STripFET N-Channel MOSFET is a high-performance transistor designed to deliver efficient power switching in electronic applications requiring robust current handling and low on-resistance. This device supports a maximum continuous drain current of 80 amperes and a drain-source voltage up to 40 volts, making it suitable for demanding power management tasks.

The MOSFET employs DeepGate STripFET technology, offering ultra-low gate charge, which enhances switching efficiency and reduces energy loss. The 3-pin TO-252 surface mount package enables compact integration in modern circuit boards.

With a maximum drain-source resistance of 6 milliohms and a maximum power dissipation of 70 watts, this MOSFET provides reliable performance in power conversion, motor control, automotive electronics, industrial equipment, and HVAC systems. Its operating temperature range from -55°C to 175°C ensures stable operation in harsh environments.

Additional features include a typical gate charge of 36 nC and forward voltage of 1.3 V, providing predictable and efficient control characteristics. The device is qualified to the automotive-grade AEC-Q101 standard, confirming suitability for automotive applications.

The device features ultra-low gate charge for efficient switching. It exhibits a maximum drain-source resistance of 6 milliohms in enhancement mode. Maximum power dissipation is rated at 70 watts. Operating temperature range spans from -55°C to 175°C.

The MOSFET is suitable for surface mount with a 3-pin configuration. Typical gate charge is 36 nanocoulombs at specified gate voltage. The package dimensions are 6.6 mm length, 6.2 mm width, and 2.4 mm height. The device meets Automotive Standard AEC-Q101.

This MOSFET is commonly utilized in industrial, automotive, power supply, and manufacturing sectors where efficient high-current switching is critical. Its compact design and robust specifications ensure long-term reliability and ease of integration.

Explore detailed STMicroelectronics product selections and electronic components at EnvMart to support your design and manufacturing needs.

STMicroelectronics DeepGate STripFET N-Channel MOSFET 80A 40V Enhancement 3-Pin TO-252 STD80N4F6
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Frequently Asked Questions

The maximum continuous drain current for this model is 80 amperes.

The maximum drain-source voltage supported by the STD80N4F6 is 40 volts.

The maximum power dissipation rating for the STD80N4F6 is 70 watts.

The operating temperature range for this MOSFET spans from -55°C to 175°C.

The package dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

This model uses a TO-252 surface mount package.

The typical gate charge for this MOSFET is 36 nanocoulombs at the specified gate voltage.

The maximum drain-source resistance in enhancement mode is 6 milliohms.

This MOSFET meets the Automotive Standard AEC-Q101.

The forward voltage for this model is 1.3 volts.

The STD80N4F6 has a 3-pin configuration.

This model utilizes an N-channel type.

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