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Nexperia Small Signal NPN Transistor BC846BS,115 100 mA 65 V 6-Pin SOT-363 BC846BS,115

Category Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BC846BS,115
Width 2.2mm
Mount Type Surface
Series BC846x
Maximum Operating Temperature 150°C
Package Type SOT-363
Pin Count 6
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
onsemi BC846BDW1T1G Transistor, 100 mA NPN, 65 V, 6-Pin SOT-363Brand onsemi

Key Features

  • This NPN transistor features a 6-Pin SOT-363 package with surface mount type.
  • Maximum DC collector current rating is 100 mA, suitable for low power switching and amplification.
  • Collector-emitter voltage maximum is 65 V, with a collector-base voltage of 80 V.
  • Minimum DC current gain (hFE) is 200 ensuring reliable gain performance.
  • Power dissipation max of 200 mW supports small signal applications.
  • The transistor configuration is isolated for enhanced operational stability.
  • Maximum operating temperature is 150°C for industrial grade robustness.
  • Complies with automotive standard AEC-Q101 certification for automotive applications.

Product Description

Nexperia BC846BS,115 is a small signal NPN bipolar transistor specifically engineered for discrete electronic semiconductor applications. Featuring a 6-pin SOT-363 surface mount package, it supports a maximum DC collector current of 100 mA and collector-emitter voltage up to 65 V, making it suitable for low power switching and amplification tasks.

This transistor exhibits a minimum DC current gain (hFE) of 200, ensuring dependable amplification in various circuit designs. Its isolated transistor configuration and maximum operating temperature of 150°C lend it high reliability and suitability in demanding environments.

Compact physical dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height facilitate dense PCB layouts. The device also dissipates a maximum power of 200 mW, maintaining efficiency in small electronic assemblies.

Intended use cases include industrial electronics, automotive systems adhering to AEC-Q101 standards, telecommunications, and general purpose signal amplification and switching in electronic circuits.

This NPN transistor features a 6-Pin SOT-363 package with surface mount type. Maximum DC collector current rating is 100 mA, suitable for low power switching and amplification. Collector-emitter voltage maximum is 65 V, with a collector-base voltage of 80 V.

Minimum DC current gain (hFE) is 200 ensuring reliable gain performance. Power dissipation max of 200 mW supports small signal applications. The transistor configuration is isolated for enhanced operational stability. Maximum operating temperature is 150°C for industrial grade robustness.

Physical dimensions are compact: 2.2 mm length, 2.2 mm width, and 1.1 mm height. Complies with automotive standard AEC-Q101 certification for automotive applications.

Use this Transistor in high-reliability industrial, automotive, and telecommunications circuit designs requiring efficient signal handling and switching components. For further high-quality semiconductor components, explore the Electronics & Electricals categories at EnvMart.

Nexperia Small Signal NPN Transistor BC846BS,115 100 mA 65 V 6-Pin SOT-363 BC846BS,115
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Frequently Asked Questions

The maximum DC collector current rating for this model is 100 mA.

This transistor has a maximum collector-emitter voltage of 65 V.

The minimum DC current gain (hFE) for this model is 200, ensuring reliable amplification performance.

The maximum power dissipation for this transistor is 200 mW, suitable for small signal applications.

The dimensions of this model are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

This transistor comes in a 6-pin SOT-363 surface mount package.

The maximum operating temperature for this model is 150°C, making it suitable for industrial applications.

This model complies with the automotive standard AEC-Q101, suitable for automotive applications.

The maximum collector-base voltage for this transistor is 80 V.

This transistor features an isolated configuration for enhanced operational stability.

This model is suitable for low power switching and amplification in industrial electronics, automotive systems, and telecommunications.

The maximum emitter-base voltage (VEBO) for this model is 6 V.

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