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onsemi PNP Power Transistor 20W 100V -6A TO-252 Surface Mount MJD42CRLG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.64mm |
| Length | 0.27mm |
| Model | MJD42CRLG |
| Width | 0.09mm |
| Mount Type | Surface |
| Series | MJD42C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | -6A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Maximum DC collector current is -6 A ensuring high current handling.
- Maximum collector-emitter voltage rating of -100 V suitable for medium voltage applications.
- Power dissipation capacity of 20 W allows efficient heat management.
- Low minimum DC current gain of 15 provides reliable operation.
- Wide operating temperature range from -65°C to 150°C enhances durability and reliability.
- 3-pin DPAK configuration for compact surface mounting.
- AEC-Q101 automotive standard qualified ensuring high quality and reliability.
Product Description
onsemi MJD42CRLG is a PNP power transistor tailored for surface mount applications requiring reliable and high current switching capability in a compact TO-252 package. It features a maximum DC collector current of -6 amperes and can withstand collector-emitter voltages up to -100 volts, making it suitable for medium voltage power circuits.
This transistor supports a maximum power dissipation of 20 watts that enables it to operate efficiently with improved thermal performance in industrial and automotive environments. It has a minimum DC current gain of 15, and a transition frequency up to 1 MHz supporting good switching characteristics.
The device supports a broad operating temperature range from -65°C to 150°C, ensuring robustness under harsh conditions. Its 3-pin DPAK surface-mount configuration facilitates compact board layouts compatible with modern PCB manufacturing.
Qualified to the industry AEC-Q101 automotive standard, the MJD42CRLG is dependable for use in automotive electronics, power supply units, motor controls, and industrial automation systems.
High maximum collector current rating (-6 A) for demanding power applications. Medium voltage rating (-100 V) suitable for a wide range of circuits. Efficient thermal handling with 20 W power dissipation. Wide temperature operating range for extreme conditions.
Compact surface mount TO-252 package ideal for space-saving designs. Automotive qualified to AEC-Q101 ensuring automotive-grade reliability. Supports high frequency operation up to 1 MHz.
This transistor enhances the performance of industrial, automotive, telecommunications, and consumer electronic systems by delivering efficient power control. It is ideal for use in DC-DC converters, power management circuits, and switching regulators where reliability and compactness are essential.
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Frequently Asked Questions
The maximum DC collector current for this model is -6 A, allowing it to handle high current applications effectively.
It has a maximum collector-emitter voltage rating of -100 V, making it suitable for medium voltage applications.
This transistor supports a maximum power dissipation of 20 W, which enables efficient heat management.
The MJD42CRLG operates within a wide temperature range from -65°C to 150°C, enhancing its reliability under extreme conditions.
It comes in a TO-252 package type, which is suitable for surface mounting.
The minimum DC current gain is 15, which provides reliable operation in various applications.
The maximum emitter-base voltage is 5 V, and the maximum collector-base voltage is 100 V dc.
This model is qualified to the AEC-Q101 automotive standard, ensuring high quality and reliability for automotive applications.
The maximum transition frequency for this transistor is up to 1 MHz, supporting good switching characteristics.
This power transistor features a 3-pin configuration, facilitating compact board layouts.
The MJD42CRLG is configured as a single PNP transistor, suitable for various electronic applications.
The transistor is manufactured in India, reflecting its origin in the semiconductor industry.
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