onsemi PNP Power Transistor, 4 A Collector Current, 100 V Collector Emitter Voltage, 3-Pin DPAK Package MJD253T4G

The onsemi MJD253T4G is a PNP power transistor engineered for efficient electronic circuit applications requiring reliable switching and amplification. This device withstands a maximum collector current of 4 A and a collector emitter voltage up to 100 V, making it suitable for medium power loads.

Housed in a TO-252 DPAK surface mount package, the transistor is designed for space-constrained PCB designs, ensuring ease of mounting and heat dissipation. Its power dissipation capability of 12.5 W supports operation under demanding electrical conditions, while its wide temperature range from -65°C to 150°C enables use in harsh industrial and automotive environments.

The transistor features a minimum current gain (hFE) of 40, providing dependable transistor action for control and amplification purposes. It complies with the automotive quality standard AEC-Q101, guaranteeing robustness and reliability in automotive applications.

This single transistor with 3 pins supports various industrial uses including power management in automotive electronics, industrial controls, and consumer electronics. Its transition frequency of 10 MHz permits adequate performance for general switching tasks.

Physical dimensions being small (height: 0.63 mm; length: 0.27 mm; width: 0.09 mm) contribute to compact device packaging and integration flexibility. This part is ideal for power control circuits where space and efficiency are critical.

Maximum DC collector current of 4 amperes suitable for high current applications. Collector emitter voltage rating of 100 volts ensures robust performance. Surface mount TO-252 DPAK package facilitates easy PCB mounting.

High power dissipation capacity of 12.5 watts supports efficient thermal management. Wide operating temperature range from -65°C to 150°C for demanding environments. Minimum DC current gain (hFE) of 40 for reliable transistor amplification.

Automotive standard AEC-Q101 qualification ensures quality and durability. 3-pin single transistor configuration for straightforward integration. Transition frequency of 10 MHz allowing moderate speed switching applications.

Compact device dimensions with a height of 0.63 mm, length of 0.27 mm, and width of 0.09 mm.

This component is well-suited for industrial, automotive, and power electronics sectors requiring durable and efficient bipolar Power Transistors. Explore more products in power transistor category at EnvMart.