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STMicroelectronics MDmesh M5 N-Channel MOSFET 15 A 710 V Enhancement 3-Pin TO-252 STD18N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD18N65M5 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 220mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features a TO-252 package with 3 pins for surface mount applications.
- It supports an enhancement mode operation with a low on-state resistance of 220 mΩ.
- Typical gate charge is only 31nC at Vgs, ensuring efficient switching.
- Maximum power dissipation is rated at 110 W with operational temperature up to 150°C.
- The device has a maximum gate-source voltage rating of -25 V to +25 V.
- Operating temperature range extends from -55°C to 150°C making it suitable for industrial environments.
- Forward voltage drop is approximately 1.5 V for reliable conduction.
- The product is manufactured in China with no specific automotive certification.
Product Description
STMicroelectronics STD18N65M5 MDmesh M5 N-Channel MOSFET is engineered for high-power applications including power factor correction (PFC) and pulse width modulation (PWM) topologies commonly used in solar power converters, consumer power supplies, and electronic lighting controls.
This enhancement mode MOSFET offers a continuous drain current of 15 A and supports a high drain-source voltage of 710 V, making it suitable for demanding switching applications. Packaged in a compact TO-252 surface mount case with 3 pins, it provides efficient thermal performance and easy PCB assembly.
Key features include a low on-state resistance of 220 mΩ and minimal gate charge (31nC), reducing switching losses and enhancing overall energy efficiency. It supports gate-source voltages from -25 V to +25 V, with a maximum power dissipation of 110 W.
The device operates reliably across a wide temperature range from -55°C to 150°C, making it ideal for industrial and commercial electronic systems requiring durable and efficient power transistors. Typical forward voltage is 1.5 V, ensuring predictable conduction characteristics.
This MOSFET is surface mountable and supplied in a 3-pin TO-252 package. It is optimized for compact, energy-conscious hard switching circuits. Applications include industrial power supplies, solar inverters, and electronic lighting control systems.
Dimensions: length 6.6 mm, width 6.2 mm, height 2.4 mm. Manufactured in China without specific automotive standards.
STMicroelectronics' MDmesh M5 series is recognized for combining low on-state losses with low gate charge, suitable for advanced power management and electronic control applications. This MOSFET aligns well with industrial, commercial, and laboratory environments where efficiency and reliability are paramount.
Explore more STMicroelectronics discrete semiconductors and Power MOSFETs available on EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15 A.
This MOSFET supports a maximum drain-source voltage of 710 V.
The on-state resistance is rated at 220 mΩ.
The typical gate charge at Vgs is 31 nC.
It operates reliably across a temperature range from -55°C to 150°C.
The maximum power dissipation is rated at 110 W.
This model is packaged in a TO-252 surface mount case with 3 pins.
The forward voltage drop is approximately 1.5 V.
The dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The maximum gate-source voltage rating is -25 V to +25 V.
This model features an N-channel configuration.
The MDmesh M5 series is suitable for high-power applications such as power factor correction and pulse width modulation in solar power converters and electronic lighting controls.
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