STMicroelectronics STripFET Type P-Channel MOSFET 12 A 30 V Enhancement Mode Surface Mount TO-252 STD26P3LLH6

STMicroelectronics STD26P3LLH6 is a P-Channel Power MOSFET featuring STripFET technology, designed for high efficiency and low power loss in surface mount power applications. This device supports a maximum continuous drain current of 12 A and a maximum drain-source voltage of 30 V, making it ideal for power management in industrial, automotive (non-automotive standard), and commercial electronic circuits.

The transistor is housed in a TO-252 package with three pins and measures 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height. It operates in enhancement mode with a maximum drain-source resistance of 45 milliohms, which contributes to reduced conduction losses and enhanced performance.

The gate charge is typically 12 nC at gate-source voltage, enabling fast switching capabilities. The device can withstand gate-source voltages from -20 V to +20 V and has a forward voltage of 1.1 V. The maximum power dissipation rating is 40 W, with a maximum operating temperature up to 175°C, ensuring reliable operation under demanding conditions.

This MOSFET is suitable for use in electronic power circuits, including power supplies, DC-DC converters, and motor control units where efficient power switching is essential. Its surface mount TO-252 package facilitates easy integration into compact electronic assemblies.

STripFET technology offers ultra-low gate charge and low Rds(on) enhancing MOSFET efficiency. 12 A continuous drain current supports demanding power applications. Compact TO-252 surface mount package suitable for automated assembly.

High temperature operation up to 175°C ensures durability under stress. 3-pin configuration simplifies circuit design and layout. Wide gate-source voltage tolerance broadens application scope. Explore the full STMicroelectronics STripFET line on EnvMart for integrated solutions in power electronics.