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onsemi Silicon Junction Switching Diode, Common Cathode, 400 mA, 3-Pin SOT-23 Package BAV23CLT1G

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model BAV23CLT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Power Dissipation Pd 400mW
Diode Configuration Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm 9A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 150ns
Maximum Forward Current If 400mA
Maximum Peak Reverse Repetitive Voltage Vrrm 250V

Key Features

  • Compact 3-pin SOT-23 package suitable for surface mounting.
  • Maximum forward voltage of 1.25 V ensuring efficient switching operation.
  • Wide operating temperature range from -55°C to 150°C.
  • High peak non-repetitive forward surge current rating of 9 A.
  • Peak reverse recovery time of 150 ns enabling fast switching performance.
  • Robust maximum power dissipation of 400 mW for reliable operation.
  • Diode configuration is common cathode for multi-function circuitry.
  • Designed for discrete semiconductor applications in electronic components.

Product Description

onsemi BAV23CLT1G is a high-performance silicon junction switching diode featuring a common cathode configuration and housed in a compact SOT-23 package with 3 pins. It supports a maximum forward current of 400 mA and can withstand peak reverse voltages up to 250 V, making it ideal for discrete semiconductor applications requiring efficient switching capabilities.

This diode’s maximum forward voltage is rated at 1.25 V, minimizing power losses during operation. It operates reliably across a broad temperature range from -55°C up to 150°C, suitable for harsh industrial environments. The peak non-repetitive forward surge current rating of 9 A allows it to handle transient surges without failure.

With a peak reverse recovery time of 150 ns, the BAV23CLT1G diode offers fast switching speeds essential for modern electronic circuits. Power dissipation is capped at 400 mW, ensuring stable thermal performance within a small form factor of length 3.04 mm, width 1.4 mm, and height 1.01 mm.

As a common cathode diode in a surface-mount package, it is optimized for automated PCB assembly in electronic manufacturing. This product is new and suitable for use in industrial, laboratory, construction electronics, power supply design, telecommunications, and automotive electronics (non-automotive standard).

Compact 3-pin surface-mount SOT-23 package for space-efficient PCB design. 400 mA maximum forward current rating for low power discrete circuits. 250 V maximum peak reverse voltage ensures high-voltage tolerance. Operating temperature range -55°C to 150°C for reliable extended use.

Fast 150 ns reverse recovery time for efficient switching. 9 A surge current capacity withstands transient current spikes. Diode configured as common cathode for switching diode applications. Small physical dimensions support compact electronic designs.

Power dissipation limited to 400 mW for thermal stability. Ideal for electronics manufacturing, power connectors, and semiconductor assemblies. Explore the extensive range of Switching Diodes and semiconductor components available with EnvMart for your diverse electronic and industrial project needs.

onsemi Silicon Junction Switching Diode, Common Cathode, 400 mA, 3-Pin SOT-23 Package BAV23CLT1G
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Frequently Asked Questions

The maximum forward current rating of this diode is 400 mA, making it suitable for low power discrete circuits.

This model can withstand a maximum peak reverse voltage of 250 V, ensuring high-voltage tolerance in applications.

The diode operates reliably across a temperature range from -55°C to 150°C, suitable for harsh industrial environments.

It is housed in a compact SOT-23 package, which is designed for surface mounting.

The BAV23CLT1G has a peak non-repetitive forward surge current rating of 9 A, allowing it to handle transient surges without failure.

This model has dimensions of 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.

The maximum power dissipation for this diode is 400 mW, ensuring stable thermal performance during operation.

The maximum forward voltage is rated at 1.25 V, which helps minimize power losses during operation.

This diode features a peak reverse recovery time of 150 ns, enabling fast switching performance.

The diode is configured as a common cathode, which is suitable for multi-function circuitry applications.

This model is suitable for use in industrial, laboratory, construction electronics, power supply design, telecommunications, and automotive electronics (non-automotive standard).

It uses a surface mount type, which is optimized for automated PCB assembly in electronic manufacturing.

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