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onsemi Transistor 1.5 A NPN 160 V 3-Pin TP-FA Surface Mount 15 W 2SC4027S-TL-E
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | 2SC4027S-TL-E |
| Width | 7mm |
| Mount Type | Surface |
| Series | 2SC4027 |
| Maximum Operating Temperature | 150°C |
| Package Type | TP-FA |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 160V |
| Minimum DC Current Gain hFE | 80 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 180V |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | 1.5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 120MHz |
Key Features
- Maximum DC collector current of 1.5 A for moderate load handling.
- Maximum collector-emitter voltage of 160 V suitable for medium voltage applications.
- Surface mount type with TP-FA package for easy PCB integration.
- Minimum DC current gain (hFE) of 80 ensuring effective amplification.
- Maximum power dissipation of 15 W allowing reliable thermal management.
- Maximum transition frequency of 120 MHz enabling high-frequency operation.
- Compact dimensions with length 6.5 mm, width 7 mm, and height 2.3 mm.
- Designed for single transistor configuration with NPN polarity.
Product Description
onsemi 2SC4027S-TL-E Bipolar Transistor is a high-performance NPN transistor designed for various electronic applications requiring reliable medium power and switching capabilities. It supports a maximum DC collector current of 1.5 A and can withstand a collector-emitter voltage up to 160 V, making it versatile for power amplification and switching circuits.
The transistor features a surface mount TP-FA package optimized for automated assembly and compact PCB layouts. With a minimum DC current gain (hFE) of 80 and a maximum power dissipation of 15 W, it provides efficient signal amplification while maintaining thermal stability. The device operates effectively up to 150°C, suitable for demanding industrial and commercial electronic systems.
This single transistor configuration with NPN polarity ensures compatibility with various circuit designs. The maximum transition frequency of 120 MHz supports high-frequency switching and amplification needs. The compact size of length 6.5 mm, width 7 mm, and height 2.3 mm enhances usability in dense electronic assemblies.
Ideal for use in industrial electronics, power supply circuits, switching regulators, and signal amplification applications. This transistor is manufactured in China under onsemi's rigorous quality standards.
Maximum DC collector current of 1.5 A for medium power applications. Collector-emitter voltage rating of 160 V ensures robust performance. Surface mount TP-FA package facilitates easy PCB mounting. Minimum DC current gain (hFE) of 80 supports efficient amplification.
Maximum power dissipation of 15 W allows for effective heat management. Operating temperature max of 150°C fits industrial requirements. High frequency operation up to 120 MHz supports fast switching. Compact dimensions and single NPN transistor configuration.
Manufactured in China under onsemi quality control.
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Frequently Asked Questions
The maximum DC collector current for this model is 1.5 A, suitable for moderate load handling.
This transistor has a collector-emitter voltage rating of 160 V, making it suitable for medium voltage applications.
It features a surface mount TP-FA package, optimized for easy PCB integration and automated assembly.
The minimum DC current gain (hFE) is 80, ensuring effective amplification for various applications.
The maximum power dissipation is 15 W, allowing for reliable thermal management during operation.
This model supports a maximum transition frequency of 120 MHz, enabling high-frequency operation.
The dimensions are 6.5 mm in length, 7 mm in width, and 2.3 mm in height, making it compact for various applications.
The maximum operating temperature is 150°C, suitable for demanding industrial and commercial applications.
It is designed for a single transistor configuration with NPN polarity, ensuring compatibility with various circuit designs.
The maximum emitter-base voltage (VEBO) is 6 V and the maximum collector-base voltage (VCBO) is 180 V.
This transistor is ideal for use in industrial electronics, power supply circuits, switching regulators, and signal amplification applications.
It is manufactured in China under onsemi's rigorous quality standards.
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