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onsemi P-Channel MOSFET 950 mA 20 V Enhancement Mode 6-Pin SOT-563 NTZS3151PT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 600μm
Length 1.7mm
Model NTZS3151PT1G
Width 1.3mm
Mount Type Surface
Series NTZS3151P
Maximum Operating Temperature 150°C
Package Type SOT-563
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 950mA
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 240mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 210mW
Typical Gate Charge Qg @ Vgs 5.6nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -0.9V

Key Features

  • Features enhancement mode operation for effective power management.
  • Low maximum drain-source resistance of 240 mΩ for efficient conduction.
  • Supports maximum power dissipation of 210 mW ensuring thermal reliability.
  • Wide operating temperature range from -55°C to 150°C suits various industrial applications.
  • Compact dimensions of 1.7 mm length, 1.3 mm width, and 600 μm height enable space-saving PCB designs.
  • Maximum gate-source voltage rating of ±8 V enhances switching performance.
  • Typical gate charge of 5.6 nC reduces switching losses.
  • Suitable for surface mount technology with 6-pin surface mount package type.

Product Description

onsemi NTZS3151PT1G is a P-Channel power MOSFET designed for efficient switching and power management in compact electronic circuits. This device supports a maximum continuous drain current of 950 mA and a drain-source voltage of 20 V, making it suitable for a wide range of low-voltage applications. Its enhancement mode channel operation and low on-resistance of 240 mΩ ensure minimal conduction losses and improved efficiency.

Encased in a 6-pin SOT-563 surface-mount package, this MOSFET is optimized for compact layouts where board space is at a premium. With a maximum power dissipation of 210 mW and wide operating temperature range between -55°C and 150°C, the NTZS3151PT1G is reliable for demanding industrial, automotive, and electronic designs.

The device features a maximum gate-source voltage of ±8 V and a typical gate charge of 5.6 nC, which contribute to fast switching speeds and reduced power consumption. Its physical dimensions (1.7 mm length, 1.3 mm width, and 600 μm height) facilitate easy integration into high-density electronic assemblies.

This MOSFET is ideal for applications such as power management ICs, signal switching, level shifting, and load switching in consumer electronics, industrial control systems, and automotive electronics. It offers robust performance and thermal stability ensuring long-term reliability.

The compact SOT-563 package type supports surface mount technology for automated assembly and reliable soldering. The device is RoHS compliant and free from harmful substances, supporting environmentally friendly manufacturing.

Features enhancement mode operation for effective power management. Low maximum drain-source resistance of 240 mΩ for efficient conduction. Supports maximum power dissipation of 210 mW ensuring thermal reliability. Wide operating temperature range from -55°C to 150°C suits various industrial applications.

Compact dimensions of 1.7 mm length, 1.3 mm width, and 600 μm height enable space-saving PCB designs. Maximum gate-source voltage rating of ±8 V enhances switching performance. Typical gate charge of 5.6 nC reduces switching losses.

Suitable for surface mount technology with 6-pin surface mount package type.

Explore the Electronics & Electricals category for high-quality MOSFET components and discrete semiconductors that meet demanding industrial and commercial application requirements.

onsemi P-Channel MOSFET 950 mA 20 V Enhancement Mode 6-Pin SOT-563 NTZS3151PT1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 950 mA.

The maximum drain-source voltage rating for this P-Channel MOSFET is 20 V.

The typical gate charge for the NTZS3151PT1G is 5.6 nC.

The dimensions of the SOT-563 package are 1.7 mm in length, 1.3 mm in width, and 600 μm in height.

This model supports a maximum power dissipation of 210 mW.

The operating temperature range for the NTZS3151PT1G is from -55°C to 150°C.

The maximum gate-source voltage rating for this MOSFET is ±8 V.

The maximum drain-source resistance for this model is 240 mΩ.

This device is designed for surface mount technology with a 6-pin SOT-563 package type.

This model is suitable for applications such as power management ICs, signal switching, level shifting, and load switching in various electronic systems.

The channel type of the NTZS3151PT1G is P-Channel, operating in enhancement mode.

The forward voltage for the NTZS3151PT1G is -0.9 V.

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