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onsemi Type P-Channel MOSFET, 1.9 A Drain Current, 30 V Drain Source Voltage, 3-Pin SOT-23 Package NTR4502PT1G

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onsemi Type P-Channel MOSFET, 1.9 A Drain Current, 30 V Drain Source Voltage, 3-Pin SOT-23 Package NTR4502PT1G

Name: onsemi Type P-Channel MOSFET, 1.9 A Drain Current, 30 V Drain Source Voltage, 3-Pin SOT-23 Package NTR4502PT1G
Brand: onsemi
SKU: 368330
Price: 0.14 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	2.9mm
Model	NTR4502PT1G
Width	1.3mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	1.9A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	350mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.25W
Typical Gate Charge Qg @ Vgs	6nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

Enhancement mode channel suitable for power switching applications.
Surface mount package enabling efficient PCB integration.
Maximum power dissipation rating of 1.25 W.
Wide operating temperature range from -55°C to 150°C.
Low drain source resistance of 350 milliohms for efficient conduction.
Maximum gate source voltage is ±20 V to prevent device damage.
Designed for reliable performance with no automotive standard compliance.

Product Description

onsemi NTR4502PT1G is a P-Channel power MOSFET designed for efficient switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 1.9 A and a drain source voltage rating of 30 V, this device operates in enhancement mode providing controlled conduction suitable for a wide range of applications.

Its compact 3-pin SOT-23 surface mount package measures 2.9 mm in length, 1.3 mm in width, and 1 mm in height, enabling space-saving PCB layouts in sophisticated electronics manufacturing environments. The MOSFET supports a maximum power dissipation of 1.25 W, ensuring robust operation under typical load conditions.

The device withstands a broad temperature range from -55°C up to 150°C, allowing use in demanding industrial and automotive-adjacent applications, although it does not conform to specific automotive standards. The maximum gate source voltage of -20 V to +20 V protects the MOSFET against overvoltage conditions on the control terminal.

Engineered to minimize conduction losses, the MOSFET exhibits a low maximum drain source resistance (Rds) of 350 milliohms, improving overall circuit efficiency. Typical gate charge at rated gate source voltage is 6 nC, facilitating fast switching in power circuits.

This high-quality, reliable component is suitable for use in industrial, electronics, and power management systems, enabling precision control in semiconductor-based applications. The NTR4502PT1G model represents a trusted choice for engineers designing surface mount device circuits requiring efficient, low-voltage P-channel MOSFETs.

Enhancement mode P-Channel MOSFET for power switching. Compact 3-pin SOT-23 package supports surface mount technology. Maximum continuous drain current of 1.9 A at 30 V drain source voltage. Low drain source resistance of 350 mΩ reduces conduction losses.

Operating temperature range from -55°C to 150°C enables robust performance. Maximum power dissipation rating of 1.25 W for thermal reliability. Gate source voltage tolerance of ±20 V for protection against overvoltage. Physical dimensions optimized for compact PCB designs.

Explore more power semiconductors and MOSFET models in the Electronics & Electricals category on EnvMart.