onsemi P-Channel MOSFET 25 A, 30 V Enhancement Mode, 3-Pin TO-252 Package NTD25P03LT4G

onsemi NTD25P03LT4G is a P-Channel Power MOSFET designed for use in electronic circuits requiring efficient high-current switching and power management. It supports a maximum continuous drain current of 25 A with a drain-source voltage of 30 V, operating in enhancement mode. The device features a low on-resistance of 90 mΩ, minimizing power dissipation and heat generation during operation.

This MOSFET is packaged in a 3-pin TO-252 surface mount configuration, allowing for compact PCB layouts. Its high power dissipation rating of 75 W enables its use in demanding industrial, industrial automation, power supply, and consumer electronics applications. The operating temperature range from -55°C up to 150°C ensures reliability under various environmental conditions.

The typical gate charge of 15 nC allows for fast switching speeds, improving overall circuit efficiency. The device also supports a maximum gate-source voltage of ±15 V, protecting the gate from voltage extremes that could damage the transistor.

Physical dimensions of the MOSFET are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height, facilitating integration into high-density circuit designs. This component is ideal for use in power management, DC-DC converters, switching regulators, and load switching in industrial, automotive, and consumer electronics sectors.

Type P channel enhancing MOSFET designed for efficient power switching. Maximum continuous drain current capacity of 25 amperes. Drain-source voltage rating up to 30 volts ensuring robust operation. Low drain-source resistance of 90 milliohms for minimal power loss.

Surface mount TO-252 package with 3 pins for easy PCB integration. Capable of dissipating power up to 75 watts for high-performance applications. Operating temperature range from -55°C to 150°C for reliable performance. Typical gate charge of 15 nanocoulombs for fast switching response.

Maximum gate-source voltage of ±15 volts protects against voltage spikes. Compact dimensions with length 6.73 mm, width 6.22 mm, and height 2.38 mm. Explore additional onsemi Power MOSFETs and discrete semiconductors in EnvMart's Electronics & Electricals category.