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STMicroelectronics MDmesh M5 N-Channel Power MOSFET, 30 A, 710 V Enhancement Mode, 3-Pin TO-220 STF38N65M5

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 16.4mm
Length 10.4mm
Model STF38N65M5
Width 4.6mm
Mount Type Through Hole
Series MDmesh M5
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 30A
Maximum Drain Source Voltage Vds 710V
Maximum Drain Source Resistance Rds 95mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 35W
Typical Gate Charge Qg @ Vgs 71nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf 1.5V

Key Features

  • Designed for high efficiency and low on-state losses in power conversion applications.
  • Built in a 3-pin TO-220 through hole package for easy mounting.
  • Features an enhancement mode channel for reliable switching performance.
  • Operates within a temperature range of -55°C to 150°C for high reliability.
  • Maximum power dissipation of 35 W suits compact and energy-conscious designs.
  • Maximum gate source voltage ranges from -25 V to +25 V.
  • Typical gate charge of 71 nC facilitates fast switching speeds.
  • Low forward voltage of 1.5 V minimizes conduction losses.

Product Description

STMicroelectronics STF38N65M5 is a high-performance N-channel MDmesh M5 series power MOSFET designed for use in power factor correction (PFC) and pulse width modulation (PWM) topologies. This enhancement mode transistor features a 30 A maximum continuous drain current and a 710 V maximum drain-source voltage, making it suitable for high-voltage, high-efficiency power supply applications.

Housed in a robust and easy-to-mount 3-pin TO-220 through hole package, the device ensures reliable thermal performance with a maximum power dissipation of 35 W and an operating temperature range spanning from -55°C to 150°C. The MOSFET's low on-state resistance of 95 mΩ and typical gate charge of 71 nC contribute to low conduction and switching losses, enhancing energy efficiency in solar power converters, electronic lighting controls, and other industrial electronics.

Operating voltages are supported up to ±25 V gate-source, with a forward voltage drop of just 1.5 V, allowing for efficient hard switching in compact, reliable designs. With dimensions of 10.4 mm in length, 16.4 mm in height, and 4.6 mm in width, the transistor is optimized for space-saving layouts in power electronic circuits.

Designed for high efficiency and low power losses in power factor correction and PWM applications. 3-pin TO-220 package enables easy mounting and thermal management. Enhancement mode N-channel provides fast switching capabilities.

Wide operating temperature range from -55°C to 150°C ensures reliability. Low on-resistance and gate charge reduce conduction and switching losses. Supports maximum gate-source voltage of -25 to +25 V for robust control.

Forward voltage of 1.5 V minimizes power dissipation during conduction. Compact dimensions suitable for space-constrained industrial designs.

This product is ideal for industrial, electronic, and power supply manufacturing applications requiring efficient, durable semiconductor components. It delivers excellent performance in energy-conscious environments such as solar energy systems and lighting control circuits.

Choose STMicroelectronics MDmesh M5 STF38N65M5 Power MOSFET for reliable, high-voltage N-channel switching in your electronic component needs. Explore more high-quality Power MOSFETs and electronic components at EnvMart's Electronics & Electricals category.

STMicroelectronics MDmesh M5 N-Channel Power MOSFET, 30 A, 710 V Enhancement Mode, 3-Pin TO-220 STF38N65M5
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Frequently Asked Questions

The maximum continuous drain current for this model is 30 A.

It has a maximum drain-source voltage rating of 710 V.

This unit is housed in a TO-220 package type, which is designed for through-hole mounting.

It operates within a temperature range of -55°C to 150°C.

The typical gate charge is 71 nC at the specified gate-source voltage.

The forward voltage drop is 1.5 V, which helps minimize conduction losses.

The maximum power dissipation is 35 W, suitable for compact designs.

This model features an N-channel type, which is designed for enhancement mode operation.

The maximum gate-source voltage ranges from -25 V to +25 V.

The dimensions are 10.4 mm in length, 16.4 mm in height, and 4.6 mm in width.

It is suitable for power factor correction (PFC) and pulse width modulation (PWM) topologies in power supply applications.

The maximum drain-source resistance is 95 mΩ, contributing to low conduction losses.

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