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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF38N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STF38N65M5 is a high-performance N-channel MDmesh M5 series power MOSFET designed for use in power factor correction (PFC) and pulse width modulation (PWM) topologies. This enhancement mode transistor features a 30 A maximum continuous drain current and a 710 V maximum drain-source voltage, making it suitable for high-voltage, high-efficiency power supply applications.
Housed in a robust and easy-to-mount 3-pin TO-220 through hole package, the device ensures reliable thermal performance with a maximum power dissipation of 35 W and an operating temperature range spanning from -55°C to 150°C. The MOSFET's low on-state resistance of 95 mΩ and typical gate charge of 71 nC contribute to low conduction and switching losses, enhancing energy efficiency in solar power converters, electronic lighting controls, and other industrial electronics.
Operating voltages are supported up to ±25 V gate-source, with a forward voltage drop of just 1.5 V, allowing for efficient hard switching in compact, reliable designs. With dimensions of 10.4 mm in length, 16.4 mm in height, and 4.6 mm in width, the transistor is optimized for space-saving layouts in power electronic circuits.
Designed for high efficiency and low power losses in power factor correction and PWM applications. 3-pin TO-220 package enables easy mounting and thermal management. Enhancement mode N-channel provides fast switching capabilities.
Wide operating temperature range from -55°C to 150°C ensures reliability. Low on-resistance and gate charge reduce conduction and switching losses. Supports maximum gate-source voltage of -25 to +25 V for robust control.
Forward voltage of 1.5 V minimizes power dissipation during conduction. Compact dimensions suitable for space-constrained industrial designs.
This product is ideal for industrial, electronic, and power supply manufacturing applications requiring efficient, durable semiconductor components. It delivers excellent performance in energy-conscious environments such as solar energy systems and lighting control circuits.
Choose STMicroelectronics MDmesh M5 STF38N65M5 Power MOSFET for reliable, high-voltage N-channel switching in your electronic component needs. Explore more high-quality Power MOSFETs and electronic components at EnvMart's Electronics & Electricals category.
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