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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5mm |
| Model | FDMS8320L |
| Width | 6mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 238A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 121nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 740mV |
onsemi FDMS8320L PowerTrench N-Channel MOSFET is a high-performance power transistor designed for demanding electronic applications requiring high current and low voltage operation.
This device is rated for a maximum continuous drain current of 238 A and can withstand a drain-source voltage of up to 40 V, making it suitable for power management in industrial and consumer electronic systems.
The FDMS8320L comes in a compact 8-Pin WDFN surface mount package measuring 5 mm length, 6 mm width, and 1.05 mm height, which facilitates easy integration into densely populated electronic circuits.
Its low on-resistance of 1.7 milliohms and typical gate charge of 121 nanocoulombs enable efficient switching with minimized losses and improved thermal management. The transistor operates across a wide temperature range from -55°C to 150°C, supporting reliability in harsh environmental conditions.
The device features an enhancement mode channel for precise control and includes a forward voltage of 740 millivolts for effective conduction. The maximum gate-source voltage rating of -20 to +20 volts provides robust protection against electrical overstress.
Supports a maximum continuous drain current of 238 A. Maximum drain-source voltage rating of 40 V. Compact surface mount WDFN 8-Pin package. Low on-resistance of 1.7 mΩ for efficient power handling. Wide operating temperature range from -55°C to 150°C.
Maximum power dissipation of 104 W suitable for robust applications. Typical gate charge of 121 nC for fast switching capability. Forward voltage of 740 mV aiding efficient conduction. Maximum gate-source voltage rating: -20 to +20 V.
Ideal for industrial power management, automotive electronics where automotive standard is not required, and consumer electronic applications requiring reliable discrete semiconductor components.
Explore the comprehensive range of semiconductor products at EnvMart for high-quality and reliable electronic components.
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