onsemi PowerTrench N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 FDN359AN

onsemi FDN359AN PowerTrench N-Channel MOSFET is a high-performance semiconductor device designed for switching and amplification in electronic circuits. This enhancement-mode MOSFET can continuously handle drain currents up to 2.7 A with a maximum drain-source voltage of 30 V, making it suitable for low voltage power management and signal switching applications.

The device is housed in a 3-pin SOT-23 surface mount package, providing a compact footprint ideal for dense PCB layouts. Its low on-resistance of 75 mΩ minimizes conduction losses, improving overall circuit efficiency and thermal management.

Built with PowerTrench technology, the MOSFET offers superior performance and heat dissipation characteristics, supporting a maximum power dissipation of 500 mW. The gate charge of 5 nC at gate-source voltage signifies fast switching capabilities beneficial in high-frequency converters and drivers.

Operational reliability is enhanced by a wide temperature range from -55°C to 150°C and a gate-source voltage tolerance of -20 V to +20 V, which makes it robust against voltage surges and ensures longevity in demanding industrial and commercial environments.

Typical forward voltage is 1.2 V which aids in maintaining efficiency where the MOSFET is used as a switch or amplifier in DC-DC converters, power supplies, and automotive electronics.

Dimensions of 2.92 mm length, 1.4 mm width, and 940 μm height enable versatile uses in compact electronic devices and embedded systems.

This MOSFET is ideally suited for industrial electronics, power management in consumer devices, telecommunications, automotive electronic control units, and general-purpose electronic circuits.

Features a low maximum drain-source resistance of 75 milliohms for efficient switching. Maximum power dissipation rating of 500 milliwatts ensures reliable operation in compact electronics. Supports a wide operating temperature range from -55°C to 150°C for robust performance.

Typical gate charge of 5 nanocoulombs at Vgs enables fast switching suitable for high-frequency applications. Maximum gate-source voltage tolerance of -20 V to +20 V protects against voltage spikes. Forward voltage drop is approximately 1.2 V for enhanced efficiency.

Compact dimensions: 2.92 mm length, 1.4 mm width, and 940 μm height facilitate space-saving PCB designs. Designed for surface mounting with PowerTrench technology ensuring optimized heat dissipation. Discover a broad selection of semiconductor and MOSFET components at EnvMart to support your industrial, laboratory, telecommunications, and automotive electronic design needs.