onsemi PowerTrench N-Channel MOSFET 6.3 A 30 V Enhancement Mode 6-Pin SSOT FDC655BN

onsemi FDC655BN PowerTrench N-Channel MOSFET is a compact discrete semiconductor device designed for reliable power switching and amplification in electronic circuits. Featuring an enhancement mode channel type, this MOSFET is optimized for surface mount applications with its 6-pin SSOT package.

It supports a maximum continuous drain current of 6.3 A and a maximum drain-source voltage of 30 V, making it ideal for low voltage power management needs in consumer electronics, industrial machinery, and automotive electronic systems. The low on-resistance (36 mΩ) significantly reduces conduction losses improving overall energy efficiency.

The device has a robust maximum power dissipation of 1.6 W and can operate securely within the temperature range from -55°C to 150°C, ensuring reliability under demanding environmental conditions. Its typical gate charge of 9 nC helps achieve fast switching speeds reducing power losses during transitions.

Compact physical dimensions (3 mm length, 1.7 mm width, 1 mm height) enable integration into tight PCB layouts, enhancing design flexibility for engineers. The maximum gate-source voltage of ±20 V allows for versatile gate drive methods.

This PowerTrench MOSFET is suitable for use in industrial controls, power supplies, lighting systems, battery management, and various automotive electronics requiring efficient switching devices. Its proven performance contributes towards energy efficient and compact electronic designs.

This MOSFET features low drain-source resistance for efficient conduction. Supports continuous drain current of up to 6.3 A. Operates with a maximum voltage of 30 V across the drain-source terminals. Compact 6-pin SSOT surface mount package supports space-saving designs.

Wide operating temperature range from -55°C to 150°C for tough environments. Typical gate charge of 9 nC enables rapid switching with minimal losses. Maximum power dissipation rating of 1.6 W ensures thermal reliability.

Forward voltage of 1.2 V suitable for power electronics applications.

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