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onsemi MegaFET N-Channel MOSFET, 16 A Continuous Drain Current, 50 V Drain Source Voltage, Enhancement Mode RFD16N05LSM9A

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 2.39mm
Length 6.73mm
Model RFD16N05LSM9A
Width 6.22mm
Mount Type Surface
Series MegaFET
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 16A
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 47mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 60W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs -10, +10V

Key Features

  • This MOSFET uses enhancement mode for effective switching.
  • Features a low maximum drain source resistance of 47 milliohms.
  • Maximum power dissipation is rated at 60 watts.
  • Typical gate charge is 80 nanocoulombs at gate-source voltage.
  • Suitable for operating temperatures ranging from -55°C up to 150°C.
  • Compact package dimensions include length 6.73 mm, width 6.22 mm, and height 2.39 mm.
  • Designed for surface mounting on PCBs to optimize circuit density.
  • Manufactured with MegaFET process technology for enhanced performance.

Product Description

onsemi RFD16N05LSM9A MegaFET N-Channel MOSFET delivers high efficiency switching with a continuous drain current of 16 A and drain-source voltage capability of 50 V. Packaged in a compact 3-pin TO-252 form factor, this surface-mount transistor offers robust performance for various electronic applications.

The transistor leverages enhancement mode operation and a MegaFET process technology which provides optimized silicon utilization for superior electrical characteristics. It features a low on-resistance of 47 milliohms, enabling reduced conduction losses and improved power efficiency in circuits.

With its maximum power dissipation of 60 W and wide operating temperature range from -55°C to 150°C, this MOSFET suits demanding industrial, automotive, and commercial electronic applications. The typical gate charge of 80 nC ensures fast switching and efficient gate control.

The package’s dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height allow compact integration on printed circuit boards for space-constrained designs. The surface mount type facilitates easy automated assembly processes.

Onsemi’s RFD16N05LSM9A MOSFET is ideal for power management, switching regulators, motor control circuits, and other power conversion applications in industrial, automotive, and consumer electronics sectors.

This MOSFET uses enhancement mode for effective switching. Features a low maximum drain source resistance of 47 milliohms. Maximum power dissipation is rated at 60 watts. Typical gate charge is 80 nanocoulombs at gate-source voltage.

Suitable for operating temperatures ranging from -55°C up to 150°C. Compact package dimensions include length 6.73 mm, width 6.22 mm, and height 2.39 mm. Designed for surface mounting on PCBs to optimize circuit density.

Manufactured with MegaFET process technology for enhanced performance. Product originates from China. Explore the Electronics & Electricals category at EnvMart for more semiconductor and MOSFET options with varying ratings and package styles.

onsemi MegaFET N-Channel MOSFET, 16 A Continuous Drain Current, 50 V Drain Source Voltage, Enhancement Mode RFD16N05LSM9A
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Frequently Asked Questions

The maximum continuous drain current for this MOSFET is 16 A.

This MOSFET has a maximum drain-source voltage rating of 50 V.

The maximum drain-source resistance is rated at 47 milliohms.

The typical gate charge is 80 nanocoulombs at gate-source voltage.

The package dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.

It can operate within a temperature range of -55°C to 150°C.

This model is designed for surface mounting on printed circuit boards (PCBs).

The maximum power dissipation is rated at 60 watts.

This MOSFET uses an N-channel enhancement mode for effective switching.

This MOSFET has a pin count of 3.

The maximum gate-source voltage is -10 V to +10 V.

This model belongs to the MegaFET series by onsemi.

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