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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 11A 900V Enhancement 3-Pin TO-247 STW12NK90Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW12NK90Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 880mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 113nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features a TO-247 package with 3 pins for through-hole mounting.
- It operates in enhancement mode with a maximum gate-source voltage of ±30 V.
- The device supports a maximum power dissipation of 230 W and a maximum operating temperature of 150°C.
- Its on-resistance is 880 mΩ, ensuring efficient switching performance.
- Designed for industrial and electronic applications requiring high voltage and current handling.
- The package dimensions are 15.75 mm length, 5.15 mm width, and 20.15 mm height.
- The gate charge is typically 113 nC at Vgs, enabling fast switching.
- It has a minimum operating temperature rating of -55°C for reliable operation in harsh environments.
Product Description
STMicroelectronics STW12NK90Z MDmesh SuperMESH N-Channel MOSFET is a discrete semiconductor device designed to provide robust high-voltage and high-current switching capabilities. Featuring a standard TO-247 3-pin through-hole package, this enhancement mode MOSFET supports a maximum continuous drain current of 11 A and a maximum drain-source voltage of 900 V, making it suited for power management and electronic component applications.
With a maximum power dissipation of 230 W, it ensures reliable performance under demanding thermal conditions, while maintaining a low on-resistance of 880 mΩ for efficient conduction. The gate-source voltage tolerance of ±30 V facilitates control in various circuit designs. Typical gate charge of 113 nC allows fast switching speeds, ideal for industrial power electronics, automotive electronics (non-automotive standard compliant), and manufacturing equipment.
The device is rated for operation between -55°C and 150°C, supporting use in rugged and industrial environments. Measuring 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height, it fits standard mounting configurations in power supply modules and discrete electronic systems.
High continuous drain current of 11 A for demanding power applications. Robust 900 V maximum drain-source voltage capability for high-voltage switching. Through-hole TO-247 package for reliable mounting and thermal management.
Enhancement mode channel operation with ±30 V gate-source voltage range. Low on-resistance of 880 mΩ for efficient power conduction. Typical gate charge 113 nC for swift switching performance. Wide operating temperature range from -55°C to 150°C.
Maximum power dissipation of 230 W for stable operation under load.
This MOSFET is widely used in electronic component manufacturing, industrial automation, power electronics, and laboratory equipment setups. Its tolerance to high voltages and currents while maintaining stable operation ensures versatility for technicians and engineers working in discrete semiconductor applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
It has a maximum drain-source voltage rating of 900 V.
This MOSFET uses a TO-247 package type with 3 pins for through-hole mounting.
The maximum power dissipation for this MOSFET is 230 W.
The on-resistance is 880 mΩ, which contributes to its efficient switching performance.
The typical gate charge at Vgs is 113 nC, allowing for fast switching speeds.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The maximum gate-source voltage is ±30 V.
The dimensions of this model are 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height.
This device features an N-channel type for enhancement mode operation.
This MOSFET is commonly used in power management, industrial automation, and electronic component manufacturing applications.
The country of origin for this MOSFET is India.
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