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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 6.2 A, 800 V, Enhancement Mode, TO-220 3-Pin STP8NK80ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STP8NK80ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.2A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Designed with enhancement mode channel type for efficient switching operations.
- Features a TO-220 package with 3 pins for through-hole mounting.
- Maximum power dissipation of 30 W for reliable thermal performance.
- Operates across wide temperature range from -55°C to 150°C.
- Maximum drain-source resistance of 1.5 Ω ensures reduced power loss.
- Typical gate charge of 46 nC allows fast switching speed.
- Rated for maximum gate-source voltage of -30 V to +30 V.
- Forward voltage rating of 1.6 V suitable for power control applications.
Product Description
STMicroelectronics STP8NK80ZFP is a N-Channel MDmesh SuperMESH MOSFET designed for applications requiring high reliability in power switching and amplification. It supports a maximum continuous drain current of 6.2 A and a drain-source voltage of 800 V, making it suitable for a range of industrial and electronic applications.
The device comes in a TO-220 package with three pins for easy through-hole mounting, enabling efficient PCB integration. Its enhancement mode channel type ensures improved efficiency and fast switching capabilities, supported by a typical gate charge of 46 nC at Vgs.
This MOSFET offers a maximum power dissipation of 30 W, providing stable thermal performance in demanding environments. Its operating temperature spans from -55°C to a maximum of 150°C, which covers a wide industrial temperature spectrum.
The maximum drain-source resistance of 1.5 Ω contributes to efficient power handling with minimal losses. The gate-source voltage rating of -30 V to +30 V provides robustness against voltage spikes during switching operations. Dimensions of 16.4 mm height, 10.4 mm length, and 4.6 mm width allow compact placement in designs.
Common industrial applications include power conversion, motor control, and high voltage switching within electronics and electrical systems. This MOSFET is well suited for electronics manufacturing, industrial automation, and other industrial sectors requiring robust semiconductor components.
Designed with enhancement mode channel type for efficient switching operations. Features a TO-220 package with 3 pins for through-hole mounting. Maximum power dissipation of 30 W for reliable thermal performance. Operates across wide temperature range from -55°C to 150°C.
Maximum drain-source resistance of 1.5 Ω ensures reduced power loss. Typical gate charge of 46 nC allows fast switching speed. Rated for maximum gate-source voltage of -30 V to +30 V. Compact dimensions: 16.4 mm height, 10.4 mm length, and 4.6 mm width.
Forward voltage rating of 1.6 V suitable for power control applications. Explore more high-quality discrete semiconductors and MOSFETs for industrial and electronic designs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.2 A.
It has a maximum drain-source voltage rating of 800 V.
The dimensions of the TO-220 package are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
The maximum power dissipation is 30 W, ensuring reliable thermal performance.
The typical gate charge at Vgs is 46 nC, allowing for fast switching speed.
It operates across a wide temperature range from -55°C to 150°C.
The maximum drain-source resistance is 1.5 Ω, which helps reduce power loss.
This model features an enhancement mode N-channel type for efficient switching operations.
The maximum gate-source voltage rating is -30 V to +30 V.
It is suitable for applications in power conversion, motor control, and high voltage switching.
It features a TO-220 package with 3 pins for through-hole mounting, facilitating easy PCB integration.
The forward voltage rating is 1.6 V, making it suitable for power control applications.
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