STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 800 V, 5.2 A, Enhancement Mode, 3-Pin TO-263 STB7NK80ZT4

STMicroelectronics STB7NK80ZT4 is a high-quality N-Channel MOSFET belonging to the MDmesh SuperMESH series. This device is designed for power electronics applications requiring robust switching and conduction performance. It features a maximum continuous drain current of 5.2 A and a drain-source voltage rating of 800 V, making it suitable for industrial, commercial, and automotive electronic circuits where reliability and efficiency are critical.

The enhancement mode transistor comes in a surface-mount 3-pin TO-263 package, facilitating easy integration into modern PCB designs with space constraints. Low on-resistance of 1.8 Ω reduces conduction losses and improves overall energy efficiency, while the maximum power dissipation of 125 W allows handling substantial power loads without overheating.

This MOSFET is engineered to operate across a wide temperature range from -55°C to 150°C, making it resilient under both cold startup and high temperature conditions. The gate charge of 40 nC at typical gate-source voltage enables fast switching, optimal for high-frequency applications such as power converters and motor control.

Key physical dimensions include a length of 10.75 mm, width of 10.4 mm, and height of 4.6 mm, supporting accurate mechanical design requirements. The typical forward voltage of 1.6 V indicates good conduction performance under load.

STMicroelectronics MDmesh SuperMESH technology enhances the device’s ruggedness and efficiency, making the STB7NK80ZT4 ideal for power management in industrial electronics and embedded systems.

Operates with maximum continuous drain current of 5.2 A. Maximum drain source voltage of 800 V for high voltage tolerance. Packaged in 3-pin TO-263 surface mount for compact design. Low drain source resistance of 1.8 Ω to reduce losses.

Supports 125 W power dissipation for demanding applications. Wide temperature operation from -55°C to 150°C. Typical gate charge of 40 nC for efficient switching. Forward voltage rating of 1.6 V indicating efficient conduction.

Precise dimensions enable accurate PCB integration. MDmesh SuperMESH technology for enhanced ruggedness and efficiency.

This MOSFET is broadly applicable across industrial power conversion, embedded systems, automotive electronics, and commercial power management fields. It provides a reliable and efficient solution for engineers developing power electronics subsystems. Browse EnvMart’s extensive MOSFET selection for complementary electronic components to meet diverse technical requirements.