STMicroelectronics MDmesh N-Channel MOSFET 21 A, 500 V Enhancement, 3-Pin TO-220 STP28NM50N

STMicroelectronics STP28NM50N is a high-performance MDmesh N-Channel MOSFET designed for power electronic applications requiring robust current handling and voltage operation. This enhancement mode device supports a maximum continuous drain current of 21 A and can withstand drain-source voltages up to 500 V, making it ideal for efficient power switching and control in industrial, automotive, and consumer electronics.

The MOSFET comes in a 3-pin TO-220 package type suitable for through-hole mounting, ensuring ease of replacement and effective heat dissipation thanks to its metal tab design. It features a maximum power dissipation rating of 150 W, supporting high power loads and thermal stability. The device's typical gate charge of 50 nC at gate-source voltage allows for fast switching speeds essential in high-frequency circuits.

Operating temperature ranges from -55°C to 150°C, guaranteeing reliable performance in harsh environments. Its maximum drain-source resistance of 158 mΩ minimizes conduction losses to enhance energy efficiency. The gate-source voltage withstands up to ±25 V for durable gate control under dynamic conditions. Forward voltage drop is measured at 1.5 V, which is acceptable for power delivery applications.

The compact physical dimensions (15.75 mm height, 10.4 mm length, and 4.6 mm width) make it suitable for integration into space-constrained electronic assemblies. While the product does not carry specific automotive certification, it is engineered to meet standard industrial quality expectations.

This STMicroelectronics MDmesh MOSFET is widely applicable in industrial power supplies, motor control, switching regulators, and other discrete semiconductor implementations where efficient and reliable switching is paramount.

This MOSFET features an enhancement mode channel for efficient power switching. The device is housed in a through-hole mount TO-220 package for easy PCB integration. Maximum power dissipation is rated at 150 W ensuring high thermal handling.

Typical gate charge is 50 nC at Vgs, enabling fast switching performance. Operates reliably in temperature ranges from -55°C to 150°C. Maximum drain-source resistance is 158 milliohms for low conduction losses. Maximum gate-source voltage is ±25 V, providing robust gate control.

Physical dimensions are 15.75 mm height, 10.4 mm length, and 4.6 mm width. Designed without automotive standards certification. Forward voltage is 1.5 V suitable for power applications. Explore more STMicroelectronics MOSFETs and discrete semiconductor products on EnvMart for your electronic and industrial applications.