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STMicroelectronics DeepGate STripFET N-Channel MOSFET 120A 60V Enhancement 3-Pin TO-220 STP260N6F6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP260N6F6 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | DeepGate, STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 183nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Features ultra-low gate charge for efficient switching.
- Offers low on-resistance of 3 milliohms for minimal power loss.
- Supports a maximum power dissipation of 300 Watts.
- Operates reliably from -55°C up to 175°C.
- Typical gate charge is 183 nanocoulombs at specified gate voltage.
- Designed for through-hole mounting in industrial applications.
- Compact dimensions - 15.75 mm height, 10.4 mm length, and 4.6 mm width.
- Provides forward voltage of 1.1V ensuring efficient conduction.
Product Description
STMicroelectronics presents the DeepGate STripFET N-Channel MOSFET model STP260N6F6, engineered for high current power applications. This device supports a maximum continuous drain current of 120A at a drain-source voltage of up to 60V with enhancement mode channel operation. The TO-220 package with 3 pins allows for efficient heat dissipation and easy integration into through-hole mounting PCB designs.
With an ultra-low gate charge of 183nC, this MOSFET minimizes switching losses, enhancing overall system performance. Its low drain-source resistance of 3mΩ reduces conduction losses, critical for energy-efficient operation. The device maintains thermal stability with a maximum power dissipation rating of 300W and operating temperatures ranging from -55°C to 175°C, ensuring reliability in demanding industrial environments.
Dimensionally compact at 15.75mm height, 10.4mm length, and 4.6mm width, the STP260N6F6 MOSFET is suitable for applications in power management, motor drives, power supplies, and other electronics requiring high current switching. The forward voltage of 1.1V supports efficient conduction behavior, complementing the overall device performance.
Ultra-low gate charge for quick switching. Low on-resistance minimizing losses. High current rating supports demanding loads. Wide operating temperature range for robustness. Compact TO-220 package for easy integration. Suitable for industrial, power management, and control applications.
Through-hole mounting ensures secure PCB connections.
This STMicroelectronics DeepGate STripFET MOSFET meets the needs of engineers designing efficient, durable power electronics. Explore related discrete semiconductor components for a comprehensive solution with EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120A at a drain-source voltage of up to 60V.
It operates reliably within a temperature range of -55°C to 175°C.
The dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
This model comes in a TO-220 package type, which allows for efficient heat dissipation.
The typical gate charge is 183 nanocoulombs at the specified gate voltage.
The maximum power dissipation rating is 300 Watts.
The forward voltage is 1.1V, which supports efficient conduction behavior.
It is designed for through-hole mounting, ensuring secure PCB connections.
The maximum drain-source voltage is 60V.
The on-resistance is 3 milliohms, minimizing conduction losses.
This model features an N-channel type, designed for enhancement mode operation.
The maximum gate-source voltage is -20V to +20V.
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