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STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V Enhancement Mode, 3-Pin TO-263 STB24NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.75mm |
| Model | STB24NM60N |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Designed with MDmesh technology for enhanced performance and efficiency.
- Surface mount package suitable for efficient PCB layout and heat dissipation.
- Offers a maximum power dissipation of 125 W and low on-resistance of 190 mΩ.
- Wide operating temperature range from -55°C to 150°C ensures reliability in harsh conditions.
- Typical gate charge of 46 nC allows for fast switching capabilities.
- Maximum gate-source voltage rating of ±30 V to protect the gate from voltage spikes.
- Forward voltage of 1.6 V supports stable conduction.
- Compact dimensions of 10.75 mm length, 10.4 mm width, and 4.6 mm height.
Product Description
STMicroelectronics STB24NM60N is a high-performance N-Channel MOSFET designed using advanced MDmesh technology, enabling efficient power management in electronic circuits.
It supports a maximum continuous drain current of 17 A and can sustain a drain-source voltage up to 650 V, making it suitable for power switching applications across various industrial and commercial electronic systems.
The device is housed in a 3-pin TO-263 surface mount package, providing excellent thermal handling and compact PCB integration. Key electrical characteristics include an on-resistance of 190 mΩ, maximum power dissipation of 125 W, and a gate charge of 46 nC, enabling fast switching and low power loss.
With an operating temperature range from -55°C to 150°C, this MOSFET is reliable for use in demanding environments such as industrial power supplies, automotive electronics, and energy management systems.
MDmesh technology enhances conductivity and switching performance. TO-263 package type optimizes heat dissipation and footprint. Low gate charge and high voltage ratings enable efficient switching. Robust temperature ratings ensure durability in extreme conditions.
Compact design facilitates integration into various electronic assemblies. This product aligns well with industrial, automotive, and power electronics sectors requiring high-performance semiconductor devices. Explore more MOSFETs and power management components to optimize your design and manufacturing processes at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
It can sustain a maximum drain-source voltage of 650 V.
The on-resistance is 190 mΩ, which contributes to its efficiency in power management.
The typical gate charge is 46 nC, allowing for fast switching capabilities.
The operating temperature range is from -55°C to 150°C, ensuring reliability in harsh conditions.
It is housed in a 3-pin TO-263 surface mount package, which optimizes heat dissipation and PCB integration.
The maximum power dissipation is 125 W, suitable for various power switching applications.
The forward voltage is rated at 1.6 V, which supports stable conduction.
The dimensions are 10.75 mm in length, 10.4 mm in width, and 4.6 mm in height.
The maximum gate-source voltage rating is ±30 V, providing protection against voltage spikes.
This model is designed using advanced MDmesh technology, enhancing performance and efficiency.
It features an N-channel configuration, suitable for various power management applications.
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