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STMicroelectronics FDmesh N-Channel MOSFET, 29 A, 600 V Enhancement Mode, 3-Pin TO-247 STW34NM60ND
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW34NM60ND |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | FDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 80.4nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- N-channel enhancement mode power MOSFET with FDmesh™ technology.
- Maximum continuous drain current of 29 amperes for high current applications.
- Drain-source voltage rating of 600 volts suitable for high voltage circuits.
- Low drain-source resistance of 110 milliohms minimizing conduction losses.
- Maximum power dissipation of 190 watts allowing robust thermal performance.
- Typical gate charge of 80.4 nanocoulombs contributing to efficient switching.
- Wide operating temperature range from -55°C to 150°C accommodating harsh environments.
- 3-pin TO-247 through-hole package facilitating easy mounting and cooling.
Product Description
The STMicroelectronics STW34NM60ND is an advanced FDmesh N-Channel power MOSFET designed for applications requiring efficient switching and high current capacity.
This enhancement mode MOSFET features a continuous drain current rating of 29 amperes and a drain-source voltage rating of 600 volts, making it highly suitable for power management in industrial and commercial electronics.
The device is housed in a through-hole TO-247 package, which supports effective heat dissipation and easy board mounting. It incorporates a low drain-source resistance of 110 milliohms, enhancing conduction efficiency and reducing power losses.
Additional key electrical characteristics include a maximum power dissipation capacity of 190 watts and a typical gate charge of 80.4 nanocoulombs, promoting fast switching speeds and improved performance.
Operating temperature ranges from -55°C to 150°C allow this MOSFET to function reliably under demanding environmental conditions. The gate-source voltage rating of ±25 volts provides robust gate protection during operation.
This product is ideal for industrial power supplies, motor control, power inverters, and other electronics applications requiring reliable and efficient power switching devices. N-Channel enhancement mode power MOSFET with FDmesh™ technology.
29 A continuous drain current and 600 V drain-source voltage ratings. Low on-resistance for improved efficiency. High power dissipation for thermal stability. Wide operating temperature range for harsh environments. Robust gate voltage handling.
TO-247 through-hole package for durability and heat management. Explore more STMicroelectronics MOSFETs and related semiconductor products in EnvMart's Electronics & Electricals category for industrial and commercial use cases.
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Frequently Asked Questions
The maximum continuous drain current for this model is 29 amperes.
This MOSFET has a drain-source voltage rating of 600 volts, making it suitable for high voltage circuits.
The typical gate charge for this MOSFET is 80.4 nanocoulombs, which contributes to its efficient switching capabilities.
The maximum power dissipation capacity of this model is 190 watts, allowing for robust thermal performance.
This MOSFET operates within a temperature range of -55°C to 150°C, accommodating harsh environmental conditions.
The STW34NM60ND is housed in a TO-247 through-hole package, which facilitates easy mounting and effective heat dissipation.
The drain-source resistance of this MOSFET is 110 milliohms, which minimizes conduction losses and enhances efficiency.
The maximum gate-source voltage rating for this MOSFET is ±25 volts, providing robust gate protection during operation.
The dimensions of this model are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
This model features an N-channel enhancement mode, which is designed for efficient power switching applications.
This MOSFET is suitable for applications such as industrial power supplies, motor control, and power inverters, requiring reliable power management.
The forward voltage for the STW34NM60ND is 1.6 volts.
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