onsemi PowerTrench Type P-Channel MOSFET Surface Mount SOT-23, 5.5 A, 20 V, 53mΩ, 1.6W FDC602P

onsemi FDC602P PowerTrench Type P-Channel MOSFET is a high-performance semiconductor device optimized for efficient power switching in electronic circuits. Encapsulated in a 6-pin SOT-23 surface mount package, it features a maximum continuous drain current of 5.5 A and a drain-source voltage threshold of 20 V, making it suitable for low voltage power management.

This MOSFET employs the PowerTrench® technology which combines a shielded-gate structure and optimized charge balance, resulting in a lower figure of merit (FOM) compared to previous generations. This leads to reduced power losses and higher system efficiency. Its low drain-source resistance of 53 milliohms minimizes conduction losses and heat generation, supporting enhanced thermal management in compact electronic devices.

With an enhancement mode channel and a typical gate charge of 14 nC at standard gate-source voltages, the FDC602P offers fast switching capabilities necessary for synchronous rectification and other power supply applications. The device also features a soft reverse recovery body diode which can eliminate the need for snubber circuits or allow replacement of higher voltage MOSFETs.

Its compact size of 3 mm length, 1.7 mm width, and 1 mm height enables use in space-sensitive industrial, automotive, and commercial electronics. Its operating temperature range from -55°C to 150°C ensures reliability across harsh environmental conditions.

The maximum power dissipation rating of 1.6 W provides robust handling for moderate power applications. Maximum gate-source voltage is rated at ±12 V, increasing device robustness during transient conditions.

Maximum continuous drain current of 5.5 A. Drain-source voltage rating of 20 V. Low on-resistance of 53 milliohms. Compact 6-pin SOT-23 surface mount package. Wide operating temperature range from -55°C to 150°C. Soft reverse recovery body diode for efficient switching.

Typical gate charge of 14 nC to optimize switching speed. PowerTrench® technology for increased efficiency. Maximum power dissipation of 1.6 W. Forward voltage of -1.2 V.

This MOSFET is ideal for use in industrial power electronics, automotive electronics, consumer electronics, and embedded systems requiring reliable, efficient P-channel switching devices. It supports applications such as synchronous rectification in AC/DC converters, DC/DC converters, and load switching circuits.

EnvMart offers this high-quality onsemi FDC602P MOSFET backed by detailed technical specifications and multiple verified product images to assist in design selection and application development.