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onsemi UltraFET N-Channel MOSFET, 20 A, 200 V Enhancement Mode, 8-Pin WDFN Package FDMS2672

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onsemi UltraFET N-Channel MOSFET, 20 A, 200 V Enhancement Mode, 8-Pin WDFN Package FDMS2672

Name: onsemi UltraFET N-Channel MOSFET, 20 A, 200 V Enhancement Mode, 8-Pin WDFN Package FDMS2672
Brand: onsemi
SKU: 364828
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	750μm
Length	5mm
Model	FDMS2672
Width	6mm
Mount Type	Surface
Series	UltraFET
Maximum Operating Temperature	150°C
Package Type	WDFN
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	156mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	78W
Typical Gate Charge Qg @ Vgs	30nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V
onsemi UltraFET N-Channel MOSFET, 20 A, 200 V Enhancement, 8-Pin WDFNBrand	onsemi

Key Features

8-pin WDFN package optimized for surface mounting.
Low on-resistance of 156 milliohms for efficiency.
Enhancement channel mode suitable for switching applications.
High maximum power dissipation of 78 W for demanding loads.
Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 30 nC ensures fast switching.
Maximum gate-source voltage rating of -20 to +20 V.

Product Description

onsemi FDMS2672 UltraFET N-Channel MOSFET is a high-performance semiconductor device designed for efficient power management in industrial and electronic circuit applications. It supports a continuous drain current of 20 A and withstands drain-source voltages up to 200 V, making it suitable for robust DC-DC converters, motor drivers, and switching regulators.

This enhancement mode MOSFET uses UltraFET® trench technology to deliver low RDS(on) resistance of 156 milliohms, contributing to improved power efficiency and reduced heat generation under load. The device comes in an 8-pin WDFN package suited for compact surface mounting designs with dimensions of 5 mm length, 6 mm width, and 750 micrometers height.

It offers high maximum power dissipation of 78 watts and reliable operation over a wide thermal range from -55°C to 150°C. The typical gate charge is 30 nC, allowing rapid switching in high frequency circuits. Its gate-source voltage rating extends from -20 to +20 volts for enhanced control. The forward voltage drop is 1.2 V, optimizing conduction characteristics.

Applications include power management in industrial electronics, laboratory equipment, automotive electronics, and high-frequency switching. The UltraFET MOSFET technology ensures low reverse recovery time and stored charge, making it ideal for switching regulators and low-voltage bus switches.

8-pin WDFN surface mount package for space-saving layouts. High current handling of 20 A continuous drain current. 200 V maximum voltage rating for versatile power applications. Low on-state resistance for minimal conduction losses.

Wide temperature range supports harsh operating environments. Optimized for high frequency and efficient power conversion. Robust gate voltage tolerance from -20 V to +20 V. Compact form factor with 5x6 mm footprint dimensions.

This onsemi UltraFET N-Channel MOSFET FDMS2672 is a reliable choice for engineers designing efficient power circuits in electronics manufacturing, automotive systems, and industrial controls. Explore the Electronics & Electricals category at EnvMart for more semiconductor components and power management devices.