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onsemi Isolated PowerTrench 2 N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC FDS89141
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 4mm |
| Model | FDS89141 |
| Width | 5mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 107mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 31W |
| Typical Gate Charge Qg @ Vgs | 5.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- Features a PowerTrench series dual N-channel MOSFET design.
- Surface mount type with isolated transistor configuration for improved thermal management.
- Maximum power dissipation of 31 W enables efficient power handling.
- Low typical gate charge of 5.1 nC facilitates fast switching.
- Operates safely from -55°C to 150°C for industrial applications.
- Maximum drain-source resistance of 107 mΩ ensures minimal conduction loss.
- Includes two elements per chip to support dual channel use.
- Compact dimensions with 1.5 mm height, 4 mm length, and 5 mm width.
Product Description
onsemi FDS89141 Isolated PowerTrench 2 N-Channel MOSFET is a dual-channel enhancement mode transistor designed for high efficiency power switching applications. It features a maximum continuous drain current of 3.5 A and can withstand up to 100 V drain-source voltage, making it suitable for various industrial, automotive, and electronic power management uses.
This MOSFET comes in an 8-pin SOIC surface mount package with isolated transistor configuration to enhance thermal performance and simplify system design. The device supports operation in harsh environments with a temperature range from -55°C to 150°C. Its low gate charge of 5.1 nC and maximum drain-source resistance of 107 mΩ ensure reduced switching and conduction losses, improving overall system efficiency.
PowerTrench technology incorporates a soft reverse recovery body diode that helps minimize switching losses and eliminates the need for additional snubber circuits, streamlining power supply architecture. This makes the FDS89141 ideal for synchronous rectification in AC/DC power supplies, DC-DC converters, and motor control circuits.
Compact dimensions (height 1.5 mm, length 4 mm, width 5 mm) and dual-element configuration per chip allow for space-efficient circuit layout and reliable performance. The transistor's forward voltage of 0.8 V complements its role in power rectification duties with enhanced efficiency.
PowerTrench dual N-channel MOSFET provides efficient power switching. Supports high current and voltage with low gate charge. Surface mount SOIC package with isolated transistor configuration. Wide operating temperature range suitable for industrial applications.
Soft body diode reduces switching losses and snubber requirements. Compact size promotes flexible PCB design. Two elements per chip facilitate versatile circuitry use. Enhancement mode MOSFET for precise control and fast switching.
This product is ideal for industrial power management, electronic component manufacturing, automotive electronics, HVAC control systems, and power supply design. Explore more advanced MOSFET solutions and components in the Semiconductor category at EnvMart for your industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.5 A.
It can withstand a maximum drain-source voltage of 100 V.
The typical gate charge is 5.1 nC, which facilitates fast switching.
The dimensions are 1.5 mm in height, 4 mm in length, and 5 mm in width.
The maximum power dissipation is 31 W, enabling efficient power handling.
It operates safely within a temperature range of -55°C to 150°C.
This MOSFET comes in an 8-pin SOIC surface mount package.
There are two elements per chip, supporting dual-channel use.
The maximum drain-source resistance is 107 mΩ, ensuring minimal conduction loss.
This model features a dual N-channel configuration.
It is suitable for industrial power management, automotive electronics, and power supply design.
It incorporates PowerTrench technology, which features a soft reverse recovery body diode to minimize switching losses.
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