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onsemi Isolated PowerTrench 2 N-Channel MOSFET 30 V 2.5 A 6-Pin SOT-23 FDC6561AN

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 3mm
Model FDC6561AN
Width 1.7mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Channel Type N
Maximum Continuous Drain Current Id 2.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 152mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 960mW
Typical Gate Charge Qg @ Vgs 2.3nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.78V
Transistor Configuration Isolated

Key Features

  • This MOSFET uses an enhancement channel mode for efficient switching performance.
  • It is packaged in a 6-pin SOT-23 surface mount package designed for compact applications.
  • Maximum drain-source resistance is 152 milliohms ensuring low conduction losses.
  • Typical gate charge is 2.3 nanocoulombs, aiding fast switching speeds.
  • Maximum power dissipation is 960 milliwatts supporting moderate power applications.
  • Operating temperature range is from -55°C to +150°C for reliability across environments.
  • The transistor configuration is isolated with a soft reverse recovery body diode.
  • Designed for power switching in AC/DC supplies and synchronous rectification.

Product Description

onsemi FDC6561AN Isolated PowerTrench 2 N-Channel MOSFET is a high-efficiency transistor optimized for power switching applications. It features a maximum continuous drain current of 2.5 A and a drain-source voltage rating of 30 V. Packaged in a compact 6-pin SOT-23 surface mount form factor, this MOSFET offers reliable performance in a minimal footprint.

The device uses an enhancement mode channel and isolates the transistor elements efficiently. It delivers low resistive losses with a maximum drain-source resistance of 152 milliohms. The typical gate charge of 2.3 nanocoulombs enables fast switching, making it suitable for synchronous rectification and power management circuits.

With a power dissipation rating of 960 milliwatts and an operating temperature range from -55°C to 150°C, the FDC6561AN maintains stability under various industrial and consumer electronics conditions. Its small size, measuring 3 mm by 1.7 mm by 1 mm, facilitates integration into compact PCB layouts.

This MOSFET is ideal for applications including AC/DC power supplies, voltage regulation, and general switching purposes in industrial, electronic component manufacturing, and laboratory environments. While it does not list specific automotive certifications, it is reliable for general power electronics projects.

This MOSFET uses an enhancement channel mode for efficient switching performance. It is packaged in a 6-pin SOT-23 surface mount package designed for compact applications. Maximum drain-source resistance is 152 milliohms ensuring low conduction losses.

Typical gate charge is 2.3 nanocoulombs, aiding fast switching speeds. Maximum power dissipation is 960 milliwatts supporting moderate power applications. Operating temperature range is from -55°C to +150°C for reliability across environments.

The transistor configuration is isolated with a soft reverse recovery body diode. Dimensions are approximately 3 mm length, 1.7 mm width, and 1 mm height. Designed for power switching in AC/DC supplies and synchronous rectification.

Complies with no specific automotive standards; suitable for general electronics projects. Explore more semiconductor components including MOSFETs on EnvMart for your industrial and electronic engineering needs.

onsemi Isolated PowerTrench 2 N-Channel MOSFET 30 V 2.5 A 6-Pin SOT-23 FDC6561AN
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.5 A.

The maximum drain-source voltage rating is 30 V.

The typical gate charge is 2.3 nanocoulombs.

The maximum power dissipation is 960 milliwatts.

The maximum drain-source resistance is 152 milliohms.

The dimensions are approximately 3 mm in length, 1.7 mm in width, and 1 mm in height.

The operating temperature range is from -55°C to +150°C.

It is packaged in a 6-pin SOT-23 surface mount package.

This model uses an enhancement channel mode.

It is designed for power switching in AC/DC supplies and synchronous rectification.

The maximum gate-source voltage is -20 V to +20 V.

The transistor configuration is isolated with a soft reverse recovery body diode.

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