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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC6561AN |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 152mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 2.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.78V |
| Transistor Configuration | Isolated |
onsemi FDC6561AN Isolated PowerTrench 2 N-Channel MOSFET is a high-efficiency transistor optimized for power switching applications. It features a maximum continuous drain current of 2.5 A and a drain-source voltage rating of 30 V. Packaged in a compact 6-pin SOT-23 surface mount form factor, this MOSFET offers reliable performance in a minimal footprint.
The device uses an enhancement mode channel and isolates the transistor elements efficiently. It delivers low resistive losses with a maximum drain-source resistance of 152 milliohms. The typical gate charge of 2.3 nanocoulombs enables fast switching, making it suitable for synchronous rectification and power management circuits.
With a power dissipation rating of 960 milliwatts and an operating temperature range from -55°C to 150°C, the FDC6561AN maintains stability under various industrial and consumer electronics conditions. Its small size, measuring 3 mm by 1.7 mm by 1 mm, facilitates integration into compact PCB layouts.
This MOSFET is ideal for applications including AC/DC power supplies, voltage regulation, and general switching purposes in industrial, electronic component manufacturing, and laboratory environments. While it does not list specific automotive certifications, it is reliable for general power electronics projects.
This MOSFET uses an enhancement channel mode for efficient switching performance. It is packaged in a 6-pin SOT-23 surface mount package designed for compact applications. Maximum drain-source resistance is 152 milliohms ensuring low conduction losses.
Typical gate charge is 2.3 nanocoulombs, aiding fast switching speeds. Maximum power dissipation is 960 milliwatts supporting moderate power applications. Operating temperature range is from -55°C to +150°C for reliability across environments.
The transistor configuration is isolated with a soft reverse recovery body diode. Dimensions are approximately 3 mm length, 1.7 mm width, and 1 mm height. Designed for power switching in AC/DC supplies and synchronous rectification.
Complies with no specific automotive standards; suitable for general electronics projects. Explore more semiconductor components including MOSFETs on EnvMart for your industrial and electronic engineering needs.
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