onsemi PowerTrench N-Channel MOSFET, 83 A, 80 V Enhancement Mode, 8-Pin WDFN Package FDMS86322

onsemi FDMS86322 PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor device designed for robust power handling in compact electronic assemblies. It features an 8-pin WDFN surface-mount package with dimensions of 5 mm length, 6 mm width, and a height of 1.05 mm, facilitating dense PCB layouts in industrial, automotive, consumer electronics, and power management applications.

This MOSFET supports a maximum continuous drain current of 83 A and a drain-source voltage of 80 V, suitable for demanding switching and amplification tasks. With a low on-resistance of 14 milliohms and a maximum power dissipation rating of 104 W, it provides efficient conduction and thermal management in high-current circuits.

The device operates in enhancement mode, with a maximum gate-source voltage of -20 to +20 V ensuring stable gate control and reliability in transient conditions. Typical gate charge is 39 nC, enabling fast switching speeds essential in PWM and switching regulator designs.

Designed for surface mount technology, the FDMS86322 MOSFET's compact form factor and robust electrical parameters make it ideal for industrial machinery, automotive electronics, HVAC controls, and manufacturing equipment that demand reliable power switching components.

Key specifications include operation over a wide temperature range from -55°C minimum to 150°C maximum, forward voltage drop of 1.2 V, and an 8-pin WDFN package type for efficient heat dissipation and reduced PCB footprint.

This MOSFET features an 8-pin WDFN package for compact surface mounting. It operates in enhancement mode with a low on-resistance of 14 milliohms for efficient conduction. The device supports high power dissipation up to 104 W and operates reliably from -55°C up to 150°C.

The maximum gate-source voltage ranges from -20 V to +20 V, providing robust gate control. Typical gate charge is 39 nanocoulombs at Vgs, enabling fast switching performance. The device size measures 5 mm in length, 6 mm in width, and 1.05 mm in height for space-efficient designs.

Forward voltage drop is rated at 1.2 V for optimized power delivery. It is suited for surface mount assembly in power management, motor control, and switching regulator systems.

This product is commonly used in electronics manufacturing, power supplies, industrial machinery, and automotive systems requiring high current and voltage MOSFETs with compact form factors. Explore the Electronics & Electricals category at EnvMart to find complementary semiconductor devices.