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onsemi PowerTrench Type P-Channel MOSFET, 20 A, 30 V, 8-Pin MLP8 FDMC6679AZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 750μm |
| Length | 3.3mm |
| Model | FDMC6679AZ |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MLP8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead-Free and RoHS |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 41W |
| Typical Gate Charge Qg @ Vgs | 65nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed with PowerTrench technology for high efficiency and power density.
- Features low gate charge and soft reverse recovery body diode for fast switching.
- Supports a maximum continuous drain current of 20 amperes at 30 volts.
- Operates with a low typical gate charge of 65 nanocoulombs at Vgs.
- Maximum power dissipation capability of 41 watts with enhanced thermal performance.
- Temperature range from a minimum of -55°C to a maximum of 150°C operating temperature.
- Compact dimensions of 3.3 mm length and width with height of 750 micrometers.
- RoHS compliant and lead-free, suitable for environmentally conscious applications.
Product Description
onsemi FDMC6679AZ PowerTrench Type P-Channel MOSFET is a surface-mount device designed for high efficiency switching in various electronic applications. It delivers a maximum continuous drain current of 20 A and a maximum drain-source voltage of 30 V, making it suitable for power management and switching tasks.
Equipped with advanced PowerTrench technology, this MOSFET optimizes system efficiency and power density by minimizing gate charge and reverse recovery charge, enabling fast switching dynamics.
The device features an 8-Pin MLP8 package that provides compactness with physical dimensions of 3.3 mm length and width and 750 μm height, facilitating high-density circuit designs.
Its robust operating temperature range from -55°C to 150°C ensures reliability in demanding industrial, automotive, and consumer electronics applications. The device also supports a maximum power dissipation of 41 W, indicating good thermal management capacity.
Lead-free and RoHS compliant, it aligns with environmental standards and is suitable for diverse applications in power supplies, synchronous rectification, and general semiconductor circuits.
Designed with PowerTrench technology for high efficiency and power density. Low gate charge and soft reverse recovery body diode enable fast switching. Maximum continuous drain current of 20 A at 30 V drain-source voltage.
Typical gate charge of 65 nC at gate-source voltage. Maximum power dissipation of 41 W for robust thermal performance. Wide operating temperature range from -55°C to 150°C. Compact 8-Pin MLP8 package with small form factor dimensions.
Compliant with Lead-Free and RoHS environmental standards.
This MOSFET is widely used in industrial, automotive, telecommunications, and consumer electronics sectors due to its reliable performance and efficient switching capabilities. It is ideal for power regulation and management systems requiring compact and durable semiconductor devices.
Explore further related electronics components and semiconductors within the EnvMart catalogue to find complementary parts and advanced MOSFET solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
It can handle a maximum drain-source voltage of 30 V.
The typical gate charge for this MOSFET is 65 nanocoulombs at the gate-source voltage.
The MLP8 package has dimensions of 3.3 mm in length and width, with a height of 750 micrometers.
The maximum power dissipation capability is 41 watts.
The operating temperature range is from -55°C to 150°C.
Yes, the FDMC6679AZ is RoHS compliant and lead-free.
This model uses a P-Channel type channel.
The maximum gate-source voltage is -25V to +25V.
The forward voltage for this MOSFET is 1.3V.
The maximum drain-source resistance is 10 milliohms.
This model supports surface mounting.
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