onsemi UltraFET N-Channel MOSFET, 3 A, 250 V Enhancement Mode, 8-Pin SOIC FDS2734

onsemi FDS2734 UltraFET N-Channel MOSFET is designed for efficient power conversion with a maximum continuous drain current of 3 A and a drain-source voltage of 250 V. Packaged in an 8-pin SOIC surface mount, it provides compactness for integration in modern electronic devices.

The device offers a maximum drain-source resistance of 225 milliohms, ensuring low conduction losses and high efficiency in power management applications. It is built to operate reliably in extreme temperature conditions ranging from -55°C to 150°C, suitable for demanding industrial and commercial environments.

With a typical gate charge of 32 nanocoulombs and gate-source voltage limits of -20 V to +20 V, this MOSFET delivers excellent switching characteristics, reducing switching losses in circuits.

Built on UltraFET trench technology by onsemi, it combines high efficiency with low gate charge and low ESR, enhancing performance especially in high frequency applications.

Applications for the FDS2734 include high-frequency DC to DC converters, switching regulators, motor drive controllers, low-voltage bus switches, and various power management uses in industrial, manufacturing, and commercial electronics.

The 8-pin SOIC package measures approximately 4 mm in length, 5 mm in width, and 1.5 mm in height, facilitating surface mount assembly in dense PCBs. onsemi’s UltraFET MOSFET family is known for robust avalanche energy tolerance and fast diode reverse recovery times, advancing efficiency in power electronic circuits.

High continuous drain current of 3 A for robust power handling. Drain-source voltage rating of 250 V for diverse electronic loads. Low RDS(on) of 225 mΩ optimizes conduction efficiency. Wide operating temperature range from -55°C to 150°C ensures durability.

Surface mount 8-pin SOIC package supports compact designs. Explore the range of onsemi semiconductor products for reliable, energy-efficient power solutions at EnvMart.