onsemi PowerTrench N-Channel MOSFET, 21 A, 150 V, Enhancement Mode, Surface Mount, 3-Pin TO-252 FDD2582

The onsemi FDD2582 PowerTrench N-Channel MOSFET is a high-performance semiconductor device engineered for efficient power switching and amplification applications in industrial and electronic systems. It is designed as an enhancement-mode MOSFET featuring an N-Channel type, optimizing conduction and switching characteristics for reliable operation.

With a maximum continuous drain current of 21 A and a maximum drain-source voltage of 150 V, this device supports demanding power conditions. Its surface-mount TO-252 package with three pins enables easy integration into various electronic assemblies, providing compactness and thermal efficiency. The maximum power dissipation rating of 95 W ensures the device can handle significant power loads without degradation.

The FDD2582 MOSFET operates efficiently across a wide temperature spectrum from -55°C to 175°C, making it suitable for robust industrial, automotive (non-certified), and commercial electronic applications. Its low maximum drain-source resistance of 172 mΩ reduces conduction losses, enhancing energy efficiency in circuits. The typical gate charge of 19 nC contributes to faster switching speeds and improved performance.

This device is manufactured in China and complies with relevant industry standards, although it does not meet specialized automotive certification requirements. The compact physical dimensions include a length of 6.73 mm, width of 6.22 mm, and height of 2.39 mm, suitable for dense PCB layouts.

Features an enhancement mode N-Channel configuration for high performance. Supports a maximum continuous drain current of 21 amperes. Maximum drain-source voltage rating of 150 volts ensures reliable operation. Package type is TO-252 with 3 pins for easy surface mounting.

Maximum power dissipation rated at 95 watts for handling high power loads. Operating temperature range spans from -55°C to 175°C for industrial applications. Low maximum drain-source resistance of 172 milliohms to minimize power loss.

Typical gate charge is 19 nanocoulombs, optimizing switching speed and efficiency. Designed and manufactured in China adhering to industry standards with no automotive certification.

This MOSFET is ideal for use in power management, industrial electronics, consumer electronics, and motor driver circuits. Explore more electronic components and related semiconductor devices on EnvMart for your design and manufacturing needs.