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onsemi PowerTrench N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 Surface Mount FDC3512
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC3512 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 141mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 800mV |
Key Features
- Enhancement mode channel provides efficient switching performance.
- Maximum drain-source resistance of 141 milliohms ensures low conduction losses.
- Capable of maximum power dissipation of 1.6 watts for reliable operation.
- Operates within a temperature range of -55°C to 150°C for wide application use.
- Compact dimensions of 3 mm length, 1.7 mm width, and 1 mm height support space-saving PCB layouts.
- Typical gate charge of 13 nC at specified gate voltage for fast switching.
- Forward voltage drop of 800 mV reduces power wastage.
- Maximum gate-source voltage ranges from -20 V to +20 V ensuring robust gate control.
Product Description
onsemi FDC3512 PowerTrench N-Channel MOSFET is engineered for efficient switching applications requiring up to 3 A continuous current and a maximum voltage rating of 80 V. Encapsulated in a space-saving 6-pin SOT-23 surface mount package, this device is ideal for compact electronic designs.
The transistor operates in enhancement mode, providing reliable performance with a maximum drain-source resistance of 141 mΩ, minimizing conduction losses. With a maximum power dissipation rating of 1.6 W, it supports steady operation within an operating temperature range of -55°C to 150°C, suitable for industrial, commercial, and automotive electronics environments.
The compact physical footprint with dimensions of 3 mm length, 1.7 mm width, and 1 mm height allows for densely packed circuit boards. The typical gate charge of 13 nC ensures fast switching suitable for power management circuits. Its robust gate-source voltage tolerance from -20 V to +20 V allows for flexible design margins.
PowerTrench MOSFET technology incorporated in this device enhances both efficiency and thermal management, making it a preferred choice for power conversion and management in industrial, communication, and consumer electronics systems.
Enhancement mode channel for efficient electrical switching. Compact 6-pin SOT-23 package fits surface mount assembly. Operates reliably across wide temperature extremes. Low Rds(on) contributes to energy-efficient circuits.
Supports high current drain with up to 3 A continuous current. Typical gate charge and voltage specifications optimize switching speed. Power dissipation of 1.6 W balances performance with thermal limits. Suitable for industrial, automotive, and consumer electronics.
Compact size supports modern miniaturized electronic designs. Explore more semiconductor components in our Electronics & Electricals category at EnvMart for comprehensive industry needs.
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Frequently Asked Questions
The FDC3512 MOSFET can handle a maximum continuous drain current of 3 A.
This model has a maximum voltage rating of 80 V.
The dimensions of this MOSFET are 3 mm in length, 1.7 mm in width, and 1 mm in height.
The maximum power dissipation for the FDC3512 is rated at 1.6 W.
The typical gate charge at the specified gate voltage is 13 nC.
The maximum drain-source resistance (Rds(on)) is 141 mΩ.
This model operates within a temperature range of -55°C to 150°C.
The FDC3512 is packaged in a 6-pin SOT-23 surface mount configuration.
The maximum gate-source voltage for the FDC3512 ranges from -20 V to +20 V.
This MOSFET is suitable for industrial, commercial, and automotive electronics applications.
The forward voltage drop for this model is 800 mV.
The FDC3512 uses an enhancement mode N-channel configuration.
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