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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FDB28N30TM |
| Width | 11.33mm |
| Mount Type | Surface |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 28A |
| Maximum Drain Source Voltage Vds | 300V |
| Maximum Drain Source Resistance Rds | 129mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
onsemi FDB28N30TM is a N-Channel UniFET MOSFET designed for high-voltage switching applications. Packaged in a 3-pin TO-263 surface mount form factor, it supports a maximum continuous drain current of 28 A and a drain-source voltage rating of 300 V. The device employs enhancement mode operation and features UniFET technology, offering one of the smallest on-state resistances among planar MOSFETs to optimize power efficiency and switching speed.
This MOSFET features a maximum power dissipation of 250 W and wide operating temperature capability from -55°C to 150°C, making it suited for demanding industrial, power conversion, and electronic ballast applications. The low typical gate charge (39 nC) and low maximum drain-source resistance (129 mΩ) enable rapid switching and low conduction losses.
Additional specifications include a typical forward voltage of 1.4 V and a maximum gate-source voltage range of -30 V to +30 V. The internal gate-source electrostatic discharge (ESD) diode allows the device to tolerate surge stresses over 2000 V HBM, enhancing its robustness in industrial environments.
Common applications for the onsemi FDB28N30TM MOSFET include power factor correction (PFC) circuits, flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts used in industrial, manufacturing, and commercial HVAC systems.
The TO-263 package dimensions measure approximately 10.67 mm in length, 11.33 mm in width, and 4.83 mm in height, facilitating integration into compact PCB layouts. Low on-state resistance for high efficiency. High voltage and current ratings suitable for industrial power applications.
Wide temperature operating range ensures reliability. Robust internal ESD protection enhances device lifespan. Compact TO-263 package for surface mounting. Explore more semiconductor devices like MOSFETs and power management components in EnvMart's comprehensive Electronics & Electricals categories.
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