Infineon N-Channel IGBT Transistor 80 A 600 V TO-247 3-Pin Through Hole IKW50N60TFKSA1

Infineon IKW50N60TFKSA1 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching applications. It delivers a maximum continuous collector current of 80 A and a collector-emitter voltage rating of 600 V in a robust TO-247 3-pin through-hole package, suitable for industrial and power electronics use.

The transistor utilizes Infineon’s TrenchStop technology, providing very low collector-emitter saturation voltage (2 V), which minimizes conduction losses. It supports a maximum power dissipation of 333 W, enabling it to handle substantial power loads efficiently while maintaining thermal stability within operating temperature limits from -40°C to 175°C.

This device features low turn-off losses and a short tail current, improving switching performance and reducing electromagnetic interference (EMI). It includes an integrated high-speed fast recovery antiparallel diode, enhancing its usability in inverter and motor control applications. The through-hole TO-247 package simplifies mounting and mechanical robustness.

Certified Pb-Free, RoHS, and JEDEC compliant, this IGBT transistor meets stringent environmental and quality standards. It is especially suited for industrial automation, power converters, motor drives, and renewable energy systems where reliable high-current switching is required.

TrenchStop technology for efficiency and low losses. 600 V collector-emitter voltage, 80 A continuous current. 333 W maximum power dissipation. Wide temperature operation (-40°C to 175°C). 3-pin TO-247 package, through-hole mount.

Integrated fast recovery diode. RoHS and Pb-Free environmental compliance. Ideal for industrial and power electronics applications. Explore the wider range of Infineon power semiconductor devices and other IGBTs available on EnvMart for your electronic and industrial needs.