$5.92
$5.75
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel IGBT Transistor 40 A 1200 V 3-Pin TO-247 Through Hole IKW40N120H3FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW40N120H3FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC, RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 483W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- The device is housed in a 3-Pin TO-247 package designed for through hole mounting.
- Maximum power dissipation is 483 W, enabling efficient heat management.
- Channel type is N with low collector emitter saturation voltage of 2.05 V.
- Device supports operating temperatures from -40°C up to 175°C ensuring robust industrial performance.
- Maximum gate emitter voltage rating is ±20 V for reliable switching control.
- Complies with JEDEC and RoHS standards ensuring quality and environmental compliance.
- Includes Infineon TrenchStop technology for low turn-off losses and minimal EMI.
- Ideal for use in power electronics, motor drives, industrial inverters, and automotive applications.
Product Description
Infineon IKW40N120H3FKSA1 is a high-performance N-Channel IGBT transistor designed for demanding power semiconductor applications. It supports a continuous collector current of 40 A and a maximum collector emitter voltage of 1200 V, making it well suited for high voltage switching circuits.
The transistor comes in a robust 3-pin TO-247 through hole package that allows easy mounting and efficient heat dissipation. With a maximum power dissipation of 483 W, it is engineered to handle intensive power loads reliably.
The device features a low collector emitter saturation voltage of 2.05 V, which optimizes efficiency by minimizing conduction losses. The maximum operating junction temperature of 175°C allows stable performance in harsh industrial environments.
Infineon's TrenchStop technology integrated in this device improves switching speed with low turn-off losses and reduces electromagnetic interference. The maximum gate emitter voltage rating of ±20 V ensures durability during gate drive transients and control.
This IGBT transistor conforms to JEDEC and RoHS standards, reflecting compliance with quality and environmental regulations. Applications range from industrial motor drives, power inverters, to advanced automotive electronic systems.
Due to its through hole mounting style and durable construction, it's ideal for industrial, manufacturing, electrical, and HVAC power switching systems. The device is housed in a 3-Pin TO-247 package designed for through hole mounting.
Maximum power dissipation is 483 W, enabling efficient heat management. Channel type is N with low collector emitter saturation voltage of 2.05 V. Device supports operating temperatures from -40°C up to 175°C ensuring robust industrial performance.
Maximum gate emitter voltage rating is ±20 V for reliable switching control. Complies with JEDEC and RoHS standards ensuring quality and environmental compliance. Includes Infineon TrenchStop technology for low turn-off losses and minimal EMI.
Ideal for use in power electronics, motor drives, industrial inverters, and automotive applications. Explore more power semiconductors and IGBT devices from leading brands at EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum collector emitter voltage of this model is 1200 V.
This unit supports a continuous collector current of 40 A.
The maximum power dissipation for this IGBT is 483 W.
It supports operating temperatures ranging from -40°C to 175°C.
This transistor is housed in a 3-pin TO-247 package designed for through hole mounting.
The collector emitter saturation voltage is 2.05 V.
It complies with JEDEC and RoHS standards, ensuring quality and environmental compliance.
It includes Infineon's TrenchStop technology, which enhances switching speed and reduces turn-off losses.
The maximum gate emitter voltage rating is ±20 V.
This model is ideal for use in power electronics, motor drives, industrial inverters, and automotive applications.
This device features a pin count of 3.
The country of origin for this IGBT transistor is India.
Related Products
$16.85
$16.35
-3%
New
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$5.92
$5.75
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent