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DiodesZetex Silicon Junction Switching Diode Single 1A 400V 2-Pin SMA US1G-13-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 2.1mm
Length 4.6mm
Model US1G-13-F
Width 2.92mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SMA
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 75ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 400V

Key Features

  • This diode has a maximum forward current rating of 1 ampere.
  • It features a peak reverse repetitive voltage of 400 volts.
  • The surface mount SMA package supports efficient PCB integration.
  • Peak non-repetitive forward surge current rating is 30 amperes for surge events.
  • Operating temperature range extends from -65°C to 150°C for robust performance.
  • Maximum forward voltage drop is 1.3 volts, optimizing power efficiency.
  • It has a fast peak reverse recovery time of 75 nanoseconds for switching applications.
  • Compact physical dimensions include length 4.6 mm, width 2.92 mm, and height 2.1 mm.

Product Description

DiodesZetex US1G-13-F is a silicon junction single switching diode designed for industrial and electronic applications requiring a 1 ampere maximum forward current with a peak reverse voltage of 400 volts. It comes in a compact 2-pin SMA surface mount package measuring 4.6 mm in length, 2.92 mm in width, and 2.1 mm in height.

The diode offers excellent switching performance with a peak reverse recovery time of 75 nanoseconds, supporting high-speed switching circuits and efficient power management. Its maximum forward voltage drop of 1.3 volts ensures reduced power loss and improved circuit efficiency.

Engineered to operate reliably within a temperature range of -65°C to 150°C, the US1G-13-F diode is built to sustain harsh thermal environments, making it suitable for automotive, industrial, and commercial electronic devices.

The peak non-repetitive forward surge current rating of 30 amperes makes it capable of handling transient current spikes, enhancing circuit protection and durability. This diode has a maximum forward current rating of 1 ampere.

It features a peak reverse repetitive voltage of 400 volts. The surface mount SMA package supports efficient PCB integration. Peak non-repetitive forward surge current of 30 amperes. Operating temperature range from -65°C to 150°C.

Maximum forward voltage of 1.3 volts minimizes power losses. Fast peak reverse recovery time of 75 nanoseconds for switching efficiency. Package dimensions: length 4.6 mm, width 2.92 mm, height 2.1 mm. Ideal for electronic components, power switching, and rectification tasks.

New product condition suitable for surface mount applications.

This switching diode is a reliable component choice in electronics manufacturing, power supply design, and automotive electronics where high efficiency and durability are required. Its silicon junction construction ensures stable operation and long-term reliability.

Explore more quality discrete semiconductor components and Switching Diodes within the Electronics & Electricals category at EnvMart for your industrial and commercial applications.

DiodesZetex Silicon Junction Switching Diode Single 1A 400V 2-Pin SMA US1G-13-F
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Frequently Asked Questions

The maximum forward current rating is 1 ampere.

The peak reverse repetitive voltage is 400 volts.

The peak non-repetitive forward surge current rating is 30 amperes.

The dimensions of the SMA package are 4.6 mm in length, 2.92 mm in width, and 2.1 mm in height.

The operating temperature range extends from -65°C to 150°C.

The maximum forward voltage drop is 1.3 volts.

The peak reverse recovery time is 75 nanoseconds.

This diode supports surface mount installation.

It has a single diode configuration.

The country of origin is India.

It is suitable for industrial and electronic applications requiring efficient power management and high-speed switching.

It is a silicon junction switching diode.

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