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DiodesZetex Silicon Junction Single Switching Diode 1 A Forward Current 200 V DO-41 Package MUR120-T
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 2.72mm |
| Brand | DiodesZetex |
| Height | 2.7mm |
| Length | 5.21mm |
| Model | MUR120-T |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 35A |
| Maximum Forward Voltage Vf | 875mV |
| Peak Reverse Recovery Time trr | 75ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- Supports 1 ampere maximum forward current and 200 volts peak reverse voltage.
- Features a through-hole mount type with a DO-41 package.
- Offers a peak reverse recovery time of 75 nanoseconds for fast switching.
- Operates reliably in temperatures from -55°C to 150°C.
- Includes 2 pins with a compact dimension of 5.21 mm length and 2.7 mm width and height.
- Maximum forward voltage is rated at 875 millivolts.
- Capable of handling 35 amperes peak non-repetitive forward surge current.
- Manufactured in China ensuring quality compliance.
Product Description
DiodesZetex MUR120-T is a silicon junction single switching diode designed for general-purpose switching applications requiring up to 1 ampere forward current and 200 volts peak reverse voltage. The device comes in a DO-41 through-hole package featuring 2 pins, making it suitable for straightforward PCB mounting.
This diode has a peak reverse recovery time of 75 nanoseconds, offering quick switching speeds essential for efficient electronic circuit designs. It operates reliably within an extensive temperature range of -55°C to 150°C to suit various industrial and commercial environments.
The diode's maximum forward voltage drop is 875 millivolts, aiding in efficient power management. Its surge capabilities include a peak non-repetitive forward surge current of 35 amperes, making it robust against transient currents during switching events.
Physical dimensions include a length of 5.21 mm, height and width of 2.7 mm, with a diameter of 2.72 mm, providing a compact footprint that fits typical electronic component layouts.
Applications for the MUR120-T include industrial electronics, power supplies, consumer electronics, and general switching circuits where reliable rectification and switching of current are required.
Supports 1 ampere maximum forward current and 200 volts peak reverse voltage. Through-hole mounting with DO-41 package for ease of installation. Fast switching with 75 ns reverse recovery time. Wide operating temperature range from -55°C to 150°C.
Compact 5.21 mm length with 2 pins. Low forward voltage drop of 875 mV for efficient operation. High surge current capacity of 35 amperes. Manufactured in China with strict quality controls. Discover more related Switching Diodes and electronic components at EnvMart, your source for reliable industrial-grade electronics.
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Frequently Asked Questions
The MUR120-T diode supports a maximum forward current of 1 ampere.
This model has a peak reverse voltage rating of 200 volts.
The diode comes in a DO-41 package, suitable for through-hole mounting.
It features a peak reverse recovery time of 75 nanoseconds, allowing for fast switching.
This diode operates reliably within a temperature range of -55°C to 150°C.
The diode has a length of 5.21 mm and a diameter of 2.72 mm, with a width and height of 2.7 mm.
The maximum forward voltage drop is rated at 875 millivolts.
It can handle a peak non-repetitive forward surge current of 35 amperes.
This diode features 2 pins for mounting.
The MUR120-T is manufactured in China, ensuring quality compliance.
It is suitable for industrial electronics, power supplies, consumer electronics, and general switching circuits.
The MUR120-T is a single diode configuration.
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