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DiodesZetex Silicon Junction Single Switching Diode 2-Pin SOD-123 Package 100 V 300 mA BAV16W-7-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.35mm
Length 2.85mm
Model BAV16W-7-F
Width 1.7mm
Mount Type Surface
Series BAV16W
Maximum Operating Temperature 150°C
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 400mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • The diode uses a silicon junction configuration for efficient switching.
  • It is housed in a compact SOD-123 surface mount package.
  • Maximum power dissipation is 400 mW with a peak reverse recovery time of 4 ns.
  • Operational temperature ranges from -65°C to 150°C for reliable performance.
  • The diode can handle a peak non-repetitive forward surge current of 2 A.
  • Maximum forward voltage is 1.25 V at the specified current.
  • This diode is designed for general switching applications in electronic circuits.
  • Manufactured in China, it ensures compliance with industry standards.

Product Description

DiodesZetex BAV16W-7-F Silicon Junction Switching Diode is a high-quality small signal diode designed for switching applications. This single diode features a silicon junction and a low forward voltage drop, enabling efficient operation at a maximum forward current of 300 mA and peak repetitive reverse voltage of 100 V. It is enclosed in a compact and reliable SOD-123 surface mount package.

The diode supports a maximum power dissipation of 400 mW and exhibits a fast peak reverse recovery time of 4 nanoseconds, making it suitable for high-speed switching circuits in industrial electronics, power and connectors systems, and semiconductor discrete component assemblies.

Its operating temperature range from -65°C up to 150°C ensures robust performance under extreme conditions. The diode package dimensions are 2.85 mm in length, 1.7 mm in width, and 1.35 mm in height, making it ideal for dense electronic circuit boards with space constraints.

Key electrical parameters include a peak non-repetitive forward surge current of 2 A and a maximum forward voltage of 1.25 V. These features enable the diode for use in power switching, signal switching, and protection circuits within commercial and industrial electronic devices.

Manufactured in China, the BAV16W-7-F meets the requirements of designers and engineers requiring reliable SMD diodes for switching tasks in electronics, power management, and semiconductor equipment.

The diode uses a silicon junction configuration for efficient switching. It is housed in a compact SOD-123 surface mount package. Maximum power dissipation is 400 mW with a peak reverse recovery time of 4 ns. Operational temperature ranges from -65°C to 150°C for reliable performance.

Dimensions are 2.85 mm in length, 1.7 mm in width, and 1.35 mm in height. The diode can handle a peak non-repetitive forward surge current of 2 A. Maximum forward voltage is 1.25 V at the specified current. This diode is designed for general switching applications in electronic circuits.

Manufactured in China, it ensures compliance with industry standards. Explore more in the Electronics & Electricals category on EnvMart for semiconductors and discrete Switching Diodes from trusted manufacturers.

DiodesZetex Silicon Junction Single Switching Diode 2-Pin SOD-123 Package 100 V 300 mA BAV16W-7-F
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Frequently Asked Questions

The maximum forward current of the BAV16W-7-F diode is 300 mA.

This diode has a peak reverse recovery time of 4 nanoseconds.

The BAV16W-7-F can handle a maximum peak reverse repetitive voltage of 100 V.

The dimensions of the BAV16W-7-F diode are 2.85 mm in length, 1.7 mm in width, and 1.35 mm in height.

The maximum power dissipation for the BAV16W-7-F is 400 mW.

The operating temperature range for the BAV16W-7-F diode is from -65°C to 150°C.

The BAV16W-7-F diode is housed in a compact SOD-123 surface mount package.

The peak non-repetitive forward surge current rating for this diode is 2 A.

The maximum forward voltage of the BAV16W-7-F is 1.25 V at the specified current.

The BAV16W-7-F uses a single diode configuration.

This diode is designed for general switching applications in electronic circuits.

The BAV16W-7-F diode is manufactured in China.

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