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DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 100 V 400 mA BAS19-7-F

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DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 100 V 400 mA BAS19-7-F

Name: DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 100 V 400 mA BAS19-7-F
Brand: DiodesZetex
SKU: 363530
Price: 0.04 USD
Availability: InStock

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Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	BAS19-7-F
Width	1.4mm
Mount Type	Surface
Series	BAS19
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	250mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	2.5A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	400mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V

Key Features

Single silicon junction diode with maximum forward current of 400 mA.
Compact SOT-23 surface-mount package with 3 pins for efficient PCB mounting.
Maximum power dissipation of 250 mW for robust operation.
Fast switching performance with peak reverse recovery time of 4 ns.
Wide operating temperature range from -65°C to 150°C.
Maximum forward voltage of 1.25 V ensures low conduction losses.
Peak non-repetitive forward surge current rating of 2.5 A.
Manufactured in China with standard quality assurance.

Product Description

DiodesZetex BAS19-7-F is a silicon junction switching diode designed for various electronic and electrical applications requiring reliable and fast switching. Housed in a compact SOT-23 surface-mount package with 3 pins, it is ideal for space-constrained PCB layouts.

This diode supports a maximum forward current of 400 mA and can withstand a peak reverse repetitive voltage of 100 V. It dissipates up to 250 mW of power, making it suitable for low power switching tasks.

The BAS19-7-F diode features a peak reverse recovery time (trr) of 4 nanoseconds, allowing it to switch quickly and efficiently, which is essential for high-frequency applications. It also endures high non-repetitive forward surge currents up to 2.5 A without damage.

The device performs reliably over a broad temperature range from -65°C to +150°C, ensuring stability in harsh operating environments. Its maximum forward voltage is specified at 1.25 V, contributing to minimal voltage drops during conduction.

Typical dimensions include a length of 3 mm, width of 1.4 mm, and height of 1.1 mm, making it compatible with modern compact electronic designs. Single silicon junction diode with 400 mA forward current rating. SOT-23 surface-mount package for compact PCB integration.

Low power dissipation of 250 mW for efficient thermal performance. Fast switching with 4 ns peak reverse recovery time. Wide operating temperature range from -65°C to 150°C. Maximum forward voltage of 1.25 V reduces conduction losses.

Supports 2.5 A peak non-repetitive forward surge current. Standard industrial quality manufactured in China.

This silicon junction switching diode is commonly used in electronic components production, power supply circuits, signal switching, and other semiconductor applications requiring compact form factor, rapid response, and reliable operation. Its industrial-grade performance makes it suitable for manufacturing, laboratory testing, and commercial electronic designs.

Explore more high-quality semiconductor products under the DiodesZetex brand to complement your electronic component needs within the electronics and electrical domain.

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