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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.8mm |
| Length | 4.35mm |
| Model | V15P45-M3/86A |
| Width | 6.15mm |
| Mount Type | Surface |
| Series | V1X |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-277 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 15A |
| Peak Reverse Repetitive Voltage Vrrm | 45V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 50mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 210A |
| Maximum Forward Voltage Vf | 580mV |
Vishay V15P45-M3/86A is a high-performance Schottky diode designed for surface mounting in the TO-277 package. The device supports a maximum continuous forward current of 15 A and a peak reverse repetitive voltage of 45 V, making it suitable for power rectification applications requiring efficient switching and low forward voltage drop.
The patented trench MOS barrier Schottky (TMBS) structure incorporated in this diode minimizes stored charges and reduces minority carrier injection, substantially improving switching speed and efficiency compared to planar Schottky rectifiers. This makes it ideal for AC/DC switched mode power supplies and DC/DC converters.
It features a compact 3-pin configuration with package dimensions of 4.35 mm length, 6.15 mm width, and 0.8 mm height, supporting dense PCB layouts. The diode is rated for a peak non-repetitive forward surge current of 210 A, allowing it to handle transient power surges effectively. Its operating temperature range extends from -40°C to 150°C, providing durability and reliability in industrial, automotive, and electronic equipment applications.
The Vishay V15P45-M3/86A diode complies with automotive quality standard AEC-Q101, ensuring suitability for automotive electronics environments with high reliability standards. This diode is manufactured in China with robust build quality typical of Vishay semiconductor components.
Patented trench MOS Barrier Schottky structure ensures high efficiency. Maximum continuous forward current: 15 A. Peak reverse repetitive voltage: 45 V. Low maximum forward voltage: 580 mV reduces power dissipation. Peak surge current capability: 210 A for transient handling.
Wide operating temperature range: -40°C to 150°C. Compact TO-277 surface mount package with 3 pins. Meets AEC-Q101 automotive standard for automotive use. Compact dimensions: Length 4.35 mm, Width 6.15 mm, Height 0.8 mm.
This diode is an excellent choice for industrial, automotive, and electronics manufacturing requiring efficient, reliable power rectification with fast switching speeds and low losses. Explore more Vishay semiconductor devices and power components at EnvMart for your electronic design needs.
Explore more products in our Schottky Diodes & Rectifiers category.
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