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onsemi PowerTrench 2 Isolated N-Channel MOSFET 5 A 20 V Surface Mount 6-Pin MLP FDMA1024NZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.75mm |
| Length | 2mm |
| Model | FDMA1024NZ |
| Width | 2mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MLP |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 739-6216Brand: onsemiManufacturers Part No.: FDMA1024NZ |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 114mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 5.3nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Isolated |
Key Features
- Features a low maximum drain-source resistance of 114 milliohms for reduced power loss.
- Utilizes an enhancement mode, isolated transistor configuration for optimized switching performance.
- Supports a maximum power dissipation of 1.4 watts and operates reliably from -55°C to 150°C.
- Compact 6-pin MLP package with dimensions of approximately 2 mm length, 2 mm width, and 0.75 mm height.
- Typical gate charge of 5.3 nC at gate-source voltage, enabling fast switching capabilities.
- Designed with a soft body diode to reduce the need for snubber circuits in synchronous rectification.
- Maximum gate-source voltage rating of -8 V to +8 V ensures device safety during operation.
Product Description
onsemi FDMA1024NZ is a PowerTrench 2 series isolated N-Channel MOSFET designed for surface mount applications requiring efficient power management. It supports a maximum continuous drain current (Id) of 5 A and a maximum drain-source voltage (Vds) of 20 V. The device is housed in a small 6-pin MLP package, measuring 2 mm by 2 mm with a height of 0.75 mm, making it suitable for compact electronic designs.
This MOSFET uses an enhancement mode, isolated transistor configuration optimized for low power dissipation of 1.4 watts and low drain-source resistance (114 milliohms), which improves system efficiency and reduces thermal losses. It features a typical gate charge of 5.3 nC at the gate-source voltage and a maximum operating temperature range from -55°C to 150°C.
The PowerTrench 2 MOSFET's soft body diode performance eliminates the need for additional snubber circuits or allows usage of lower voltage rating MOSFETs, benefiting AC/DC power supply designs. The device can tolerate a maximum gate-source voltage of -8 V to +8 V. Forward voltage is maintained at a low 0.7 V, enhancing switching efficiency.
onsemi offers this MOSFET optimized for a variety of industrial applications including power management in electronic equipment, automotive electronics, industrial automation, and consumer electronics. The surface mount configuration facilitates high-density PCB assembly and improved thermal management.
Low maximum drain-source resistance reduces conduction losses. Enhancement mode isolated transistor ensures safe and efficient switching. Compact MLP package suitable for space-constrained applications. Wide operating temperature range of -55°C to 150°C enhances reliability.
Soft body diode minimizes additional circuit components for rectification. Compatible with synchronous rectification in power supplies for improved efficiency. Designed for high efficiency in power electronics and industrial use cases.
This product is classified under the Electronics & Electricals category specifically as a MOSFET, suited for discrete semiconductor needs within various industrial, electronics manufacturing, and laboratory applications. Explore similar high-quality onsemi MOSFETs and discrete semiconductor devices on EnvMart for your power management projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5 A.
It supports a maximum drain-source voltage of 20 V.
The maximum power dissipation is 1.4 watts.
The dimensions of the package are approximately 2 mm in length, 2 mm in width, and 0.75 mm in height.
The typical gate charge is 5.3 nC at the gate-source voltage.
The maximum gate-source voltage rating is -8 V to +8 V.
It operates reliably within a temperature range of -55°C to 150°C.
This model uses an enhancement mode, isolated transistor configuration.
The maximum drain-source resistance is 114 milliohms.
It is optimized for power management in electronic equipment, automotive electronics, industrial automation, and consumer electronics.
Yes, it features a soft body diode to reduce the need for snubber circuits in synchronous rectification.
The forward voltage is maintained at a low 0.7 V.
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