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onsemi PowerTrench N-Channel MOSFET, 80 A, 100 V Enhancement Mode, 8-Pin WDFN Package FDMS86101
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5.1mm |
| Model | FDMS86101 |
| Width | 6.25mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 739-4848Brand: onsemiManufacturers Part No.: FDMS86101 |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 14mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features an enhancement mode N-channel configuration for efficient switching performance.
- The maximum continuous drain current rating is 80 A, suitable for high power applications.
- The device supports a maximum power dissipation of 104 W and operates reliably up to 150°C.
- Designed for surface mounting in space-constrained applications with package dimensions of 5.1 mm length, 6.25 mm width, and 1.05 mm height.
- It features a low maximum drain-source resistance of 14 milliohms for improved efficiency.
- The typical gate charge at Vgs is 39 nC ensuring fast switching capability.
- Operating temperature range covers from -55°C minimum to 150°C maximum.
- The MOSFET has 8 pins for secure electrical connections and integration.
Product Description
The onsemi FDMS86101 PowerTrench N-Channel MOSFET is a robust discrete semiconductor tailored for applications requiring high current and voltage handling capability with efficient switching. It features an 8-pin WDFN surface mount package, making it ideal for compact electronics in industrial, automotive, and power management systems.
Boasting an 80 A maximum continuous drain current and a 100 V maximum drain-source voltage, this device meets demands in high-performance circuits, power converters, and motor control modules. The enhancement mode channel ensures reliable switching, while the low on-resistance of 14 mΩ minimizes conduction losses.
This MOSFET supports a maximum power dissipation of 104 W and can function over a broad temperature range from -55°C to 150°C, assuring durability in harsh environments. The typical gate charge of 39 nC supports high-speed switching in PWM and voltage regulation applications.
The package dimensions of 5.1 mm length, 6.25 mm width, and 1.05 mm height contribute to efficient PCB layout and thermal management. The maximum gate-source voltage ranges from -20 V to +20 V, providing design flexibility and protection.
Enhancement mode N-Channel configuration for effective switching. High maximum continuous drain current of 80 A for power-intensive uses. Surface mount 8-pin WDFN package suitable for compact electronics. Low on-resistance of 14 milliohms reduces conduction losses.
Wide operating temperature range from -55°C to 150°C with good thermal performance. Gate charge optimized for fast switching at 39 nC. Maximum drain-source voltage of 100 V for versatile power handling. Compact package dimensions ensuring space-efficient PCB design.
This MOSFET is widely applicable in industrial power control, automotive electronics, and consumer devices requiring reliable semiconductor switching elements. It belongs to the PowerTrench series from onsemi, renowned for quality and performance.
Explore more PowerTrench MOSFETs and related semiconductor devices in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 A, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage of 100 V, allowing it to handle significant voltage levels in various applications.
The package dimensions are 5.1 mm in length, 6.25 mm in width, and 1.05 mm in height, designed for surface mounting in compact spaces.
The operating temperature range for this MOSFET extends from -55°C to 150°C, ensuring reliable performance in various environments.
The typical gate charge at Vgs is 39 nC, which supports fast switching capabilities in applications such as PWM and voltage regulation.
The maximum power dissipation for this model is 104 W, allowing it to manage heat effectively during operation.
This MOSFET features 8 pins, providing secure electrical connections for integration into circuits.
The maximum drain-source resistance for this unit is 14 milliohms, which helps to minimize conduction losses during operation.
It supports surface mounting, making it suitable for compact electronic designs.
This model is part of the PowerTrench series from onsemi, known for its efficient switching performance.
The maximum gate-source voltage ranges from -20 V to +20 V, providing flexibility in design and protection.
The country of origin for this product is India.
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