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onsemi PowerTrench Type P-Channel MOSFET, 4 A, 30 V Enhancement, 6-Pin SOT-23 FDC658AP
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC658AP |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 739-0186Brand: onsemiManufacturers Part No.: FDC658AP |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -0.77V |
Key Features
- This MOSFET features a low maximum drain-source resistance of 75 mΩ for minimal power loss.
- It operates with a maximum continuous drain current of 4 A and maximum drain-source voltage of 30 V.
- The device uses a 6-pin SOT-23 surface mount package optimized for compact assembly.
- Maximum power dissipation is rated at 1.6 W, supporting thermal stability up to 150°C.
- The chip exhibits a low gate charge of 6 nC, enabling fast switching performance.
- Rated minimum operating temperature is -55°C, ensuring reliable operation in harsh environments.
- Includes a soft body diode to eliminate snubber circuits in power supply designs.
Product Description
onsemi FDC658AP PowerTrench Type P-Channel MOSFET is a high-efficiency enhancement mode transistor designed for power management in electronics and electrical applications. It supports a maximum continuous drain current of 4 A and maximum drain-source voltage of 30 V, making it suitable for compact surface-mounted circuits using a 6-pin SOT-23 package.
This MOSFET series is built with onsemi's advanced PowerTrench technology, which optimizes switching performance by reducing gate charge and offering a soft reverse recovery body diode. These features reduce power losses and improve efficiency in synchronous rectification within AC/DC power supplies.
The device has a maximum power dissipation rating of 1.6 W and can operate between -55°C to 150°C, making it reliable under varying industrial and commercial environments. Its low on-resistance of 75 mΩ minimizes conduction losses, enhancing power density and thermal management.
The low typical gate charge of 6 nC at Vgs improves switching speeds, contributing to higher system efficiency in electronic components such as power supplies, motor control, and DC/DC converters. The maximum gate-source voltage is rated at ±25 V, ensuring robustness against voltage spikes.
Package dimensions are compact, with a length of 3 mm, width of 1.7 mm, and height of 1 mm, suitable for high-density circuit board design. The product is RoHS compliant and made in India, following industry standards.
Applications include industrial electronics, telecommunications, automotive power management, consumer electronics, and embedded systems requiring efficient power switching solutions.
This MOSFET enables fast switching and increased system efficiency. Its shielded-gate structure provides charge balance for improved figure of merit. The soft body diode helps eliminate the need for external snubber circuitry.
Six-pin SOT-23 package supports surface-mount technology assembly. Designed for use in industrial, commercial, and automotive power electronics. Explore more on semi-conductors and power management components in the Electronics & Electricals category at EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
The maximum drain-source voltage is rated at 30 V.
The typical gate charge is 6 nC at Vgs.
The dimensions of the SOT-23 package are 3 mm in length, 1.7 mm in width, and 1 mm in height.
The maximum power dissipation rating is 1.6 W.
This model operates within a temperature range of -55°C to 150°C.
It supports surface mounting, specifically in a 6-pin SOT-23 package.
The maximum gate-source voltage is rated at ±25 V.
The maximum drain-source resistance is 75 mΩ.
This MOSFET is suitable for applications in industrial electronics, telecommunications, automotive power management, and consumer electronics.
Yes, it includes a soft body diode to eliminate snubber circuits in power supply designs.
The FDC658AP is manufactured in India.
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