onsemi PowerTrench Type P-Channel MOSFET, 4 A Drain Current, 30 V Drain Source Voltage, SOT-23 6-Pin Package FDC658AP

onsemi FDC658AP PowerTrench Type P-Channel MOSFET is a surface mount transistor designed for power-efficient switching applications in electronic circuits. It features a maximum continuous drain current of 4 A and a maximum drain-source voltage of 30 V, making it ideal for moderate power level applications.

The device incorporates a shielded-gate structure that balances charge and improves the figure of merit over previous generation devices, resulting in reduced switching losses and higher efficiency.

The MOSFET is packaged in a compact 6-pin SOT-23 surface mount package with dimensions of 3 mm length, 1.7 mm width, and 1 mm height, making it suitable for densely packed electronic assemblies.

This component operates effectively across a wide temperature range of -55°C to 150°C, ensuring reliability in diverse environments. The soft reverse recovery body diode eliminates the need for snubber circuits or allows substitution for higher voltage MOSFETs, enhancing design flexibility.

Low maximum drain-source resistance of 75 mΩ to minimize conduction losses. Small typical gate charge of 6 nC to support fast switching. Robust gate-source voltage handling from -25 V to +25 V ensures strong gate control.

Maximum power dissipation rating of 1.6 W for effective thermal management. Compact SOT-23 6-pin package for surface mount applications.

These MOSFETs are widely applicable in consumer electronics, industrial controls, power management modules, and other semiconductor-based circuits requiring efficient switch devices.

As part of the PowerTrench series, this MOSFET is optimized for enhanced power density and system efficiency. Explore a broad range of discrete semiconductor components and MOSFETs at EnvMart for your electronic assembly and design needs.