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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML6246TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 737-7221Brand: InfineonManufacturers Part No.: IRLML6246TRPBFDistrelec Article No.: 304-45-317 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.1A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 66mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
Infineon IRLML6246TRPBF is a HEXFET N-Channel MOSFET designed for efficient low-voltage switching with a maximum continuous drain current of 4.1 A and a drain-source voltage of 20 V. Packaged in a compact 3-pin SOT-23 surface-mount format, it offers low on-resistance of 66 milliohms which minimizes conduction losses, supporting energy-efficient operation in modern electronics.
This enhancement mode transistor features a typical gate charge of 3.5 nC that allows faster switching transitions, making it suitable for power management tasks in compact devices. Its maximum power dissipation rating of 1.3 W fits well within constrained thermal environments. The device robustly withstands a wide temperature range from -55°C up to 150°C, making it reliable under temperature extremes commonly encountered in industrial and automotive applications.
The gate-source voltage tolerance up to ±12 V provides adequate drive margin without risking gate oxide damage. The small SOT-23 package optimizes PCB space and supports automated pick-and-place assembly, enhancing manufacturing efficiency. This MOSFET finds ideal use in battery management systems, load switching in power distribution modules, motor control low-voltage stages, and synchronous switching in DC-DC converters.
Additional applications include signal-level high-speed switching within control circuits for industrial electronics, telecommunication devices, and portable systems. The device's design balances electrical performance and thermal constraints, offering a reliable solution for integrated power electronics modules.
Operates with a maximum continuous drain current of 4.1 A suitable for moderate loads. Has a maximum drain-source voltage of 20 V for low-voltage switching. Features low on-resistance of 66 milliohms reducing conduction losses.
Typical gate charge is 3.5 nanocoulombs that aids faster switching transitions. Maximum power dissipation rated at 1.3 W supports constrained thermal budgets. Compact SOT-23 3-pin surface mount package facilitates space saving and automated assembly.
Wide operating temperature range from -55°C to 150°C for harsh environments. Gate-source voltage tolerance up to 12 V ensures robust drive margins. Ideal for battery management, power distribution, motor control, and DC-DC converter applications.
Provides efficient and reliable performance in compact and low-power electronic systems. Explore the broad range of Infineon semiconductors and MOSFET components on EnvMart for professional industrial applications and electronic circuit design needs.
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