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Infineon HEXFET N-Channel MOSFET 327A 40V Enhancement Mode 3-Pin TO-247 IRLP3034PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRLP3034PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 725-9363Brand: InfineonManufacturers Part No.: IRLP3034PBFDistrelec Article No.: 30284109 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 327A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 341W |
| Typical Gate Charge Qg @ Vgs | 108nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Offers high power dissipation capability at 341 W for demanding applications.
- Features an enhancement mode channel with a low maximum drain-source resistance of 2 milliohms.
- Designed for through-hole mounting for secure installation.
- Operates in a wide temperature range from -55°C to 175°C.
- Typical gate charge is 108 nC at Vgs, ensuring efficient switching.
- Maximum gate-source voltage range from -20V to +20V for enhanced control.
- Forward voltage drop is typically 1.3 V, minimizing power loss.
- Suitable for motor control, AC-DC synchronous rectifier, and high-efficiency power applications.
Product Description
Infineon IRLP3034PBF is a robust HEXFET N-Channel MOSFET with a high continuous drain current rating of 327A and a maximum drain-source voltage of 40V. Packaged in a 3-pin TO-247 format, it supports through-hole mounting, providing mechanical stability and ease of handling in industrial electronic assemblies.
Its enhancement mode channel design and low drain-source resistance (Rds) of 2 milliohms offer superior electrical performance, which is particularly beneficial in power electronics, motor control, and synchronous rectifier applications. This MOSFET delivers significant power dissipation capacity at 341 W, enabling it to handle demanding loads efficiently.
The device features a typical gate charge of 108 nC at the gate-source voltage and a maximum gate-source voltage tolerance between -20V and +20V, facilitating precise switching control and robustness against voltage spikes. The forward voltage drop is minimized at around 1.3 V, contributing to reduced power losses and improved efficiency.
Operating temperature ranges from -55°C up to 175°C, allowing deployment in harsh industrial environments. The compact physical dimensions of 20.7 mm height, 15.87 mm length, and 5.31 mm width help in space-constrained PCB designs without sacrificing performance.
This MOSFET is ideal for various industrial sectors such as motor drives, power supply units, and synchronous rectifiers in AC-DC converters, delivering reliable and efficient power switching control.
High continuous drain current of 327A with 40V drain-source voltage. Low Rds(on) of 2 milliohms in an enhancement mode channel. Thermal operation from -55°C to 175°C for challenging environments. Through-hole mounted 3-pin TO-247 package offers ease of installation.
Optimized for motor control and synchronous rectifier applications. Discover more industrial-grade MOSFET and semiconductor products in the Infineon category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 327A.
This MOSFET has a maximum drain-source voltage of 40V.
It features a low maximum drain-source resistance of 2 milliohms.
The power dissipation capability of this MOSFET is 341W, suitable for demanding applications.
The typical gate charge at Vgs is 108 nC.
It operates within a wide temperature range from -55°C to 175°C.
This model is designed for through-hole mounting, providing secure installation.
The dimensions are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
The maximum gate-source voltage range is from -20V to +20V.
It is suitable for motor control, AC-DC synchronous rectification, and high-efficiency power applications.
The forward voltage drop is typically 1.3V, which helps minimize power loss.
The channel type of this MOSFET is N-channel with enhancement mode.
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