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DiodesZetex PNP Transistor, 3 A, 40 V, 3-Pin SOT-23 Package ZXTP25040DFHTA

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model ZXTP25040DFHTA
Width 2.5mm
Mount Type Surface
Series ZXTPX
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
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RS Stock No. 711-5187PBrand: DiodesZetexManufacturers Part No.: ZXTP25040DFHTA
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -7V
Maximum Collector Base Voltage VCBO -45V
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101
Maximum Power Dissipation Pd 1.81W
Maximum DC Collector Current Idc -3A
Transistor Configuration Single
Maximum Transition Frequency ft 270MHz

Key Features

  • This transistor supports a maximum DC collector current of -3 A.
  • Maximum collector-emitter voltage is rated at -40 V for robust switching performance.
  • It features a PNP transistor polarity in a compact 3-pin SOT-23 outline package.
  • Designed to operate over a temperature range from -55°C to 150°C.
  • Maximum power dissipation is 1.81 W ensuring reliable thermal handling.
  • High transition frequency of 270 MHz suits high-speed applications.
  • Offers a minimum DC current gain (hFE) of 30 for amplification requirements.
  • Automotive standards AEC-Q200, AEC-Q100, and AEC-Q101 certified for quality and reliability.

Product Description

DiodesZetex ZXTP25040DFHTA is a high-performance general purpose PNP bipolar transistor designed for a variety of electronic applications requiring reliable switching and amplification. It is rated for a maximum DC collector current of 3 A and a maximum collector-emitter voltage of 40 V, providing robust operation in power management and signal processing circuits.

Packaged in a compact 3-pin SOT-23 surface-mounted device form factor with dimensions of 3 mm x 2.5 mm x 1.1 mm, this transistor is ideal for space-constrained assemblies on printed circuit boards. It features a maximum power dissipation capacity of 1.81 W which ensures dependable thermal performance in demanding environments.

The transistor supports a high transition frequency of 270 MHz, making it suitable for high-frequency signal amplification and switching applications. The minimum DC current gain (hFE) of 30 guarantees efficient current amplification. It complies with automotive quality standards AEC-Q200, AEC-Q100, and AEC-Q101, indicating suitability for automotive and industrial use cases requiring strict reliability.

The device operates reliably over an extended temperature range from -55°C to 150°C, making it appropriate for harsh environmental conditions often encountered in industrial, automotive, and power electronics sectors. Its small footprint and surface mount package type facilitate automated assembly, contributing to efficient manufacturing processes.

This transistor is commonly used in industrial automation, power supply regulation, motor control, audio amplification, and other electronic system designs where reliable PNP transistor performance is required. It is a versatile component for engineers designing robust and compact electronic circuits.

This transistor supports a maximum DC collector current of -3 A. Maximum collector-emitter voltage is -40 V. Features a 3-pin SOT-23 surface mount package. Minimum DC current gain (hFE) of 30 for effective amplification.

High frequency operation up to 270 MHz. Power dissipation capacity of 1.81 W for thermal endurance. Complies with automotive standards AEC-Q200, AEC-Q100, AEC-Q101. Operational temperature range from -55°C to 150°C. Compact size: 3 mm length x 2.5 mm width x 1.1 mm height.

Suitable for industrial, automotive, and consumer electronic applications. Explore the full range of Bipolar Transistors at EnvMart to find compatible components tailored to your specific electronic and industrial control requirements.

DiodesZetex PNP Transistor, 3 A, 40 V, 3-Pin SOT-23 Package ZXTP25040DFHTA
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Frequently Asked Questions

The maximum DC collector current for this model is -3 A.

This transistor has a maximum collector-emitter voltage rating of -40 V.

It features a high transition frequency of 270 MHz, suitable for high-speed applications.

The transistor is packaged in a 3-pin SOT-23 surface mount package, with dimensions of 3 mm x 2.5 mm x 1.1 mm.

The minimum DC current gain (hFE) is 30, which is effective for amplification requirements.

It operates reliably over a temperature range from -55°C to 150°C.

The maximum power dissipation capacity is 1.81 W, ensuring reliable thermal handling.

This model complies with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101.

The maximum emitter-base voltage (VEBO) is -7 V.

It is suitable for applications in industrial automation, power supply regulation, motor control, and audio amplification.

This transistor is designed for surface mounting, making it suitable for automated assembly processes.

The maximum collector-base voltage (VCBO) rating is -45 V.

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