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DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 4.8 A, 60 V Enhancement, 8-Pin SOIC ZXMP6A18DN8TA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 5mm |
| Model | ZXMP6A18DN8TA |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020 |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 708-2554PBrand: DiodesZetexManufacturers Part No.: ZXMP6A18DN8TA |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.85V |
| Transistor Configuration | Isolated |
Key Features
- This power MOSFET supports a maximum continuous drain current of 4.8 amperes.
- Rated for maximum drain-source voltage of 60 volts with enhancement mode operation.
- Packaged in an 8-pin SOIC surface mount form factor for easy PCB integration.
- Features low maximum drain-source resistance of 80 milliohms for efficient switching.
- Operates within a temperature range from -55°C to +150°C for robust industrial use.
- Typical gate charge at Vgs is 44 nanocoulombs, enabling fast switching performance.
- Isolated configuration contains two P-Channel MOSFET elements per chip.
- Ideal for automotive and power management applications requiring AEC-Q101 certification.
Product Description
DiodesZetex ZXMP6A18DN8TA is an isolated dual P-Channel power MOSFET featuring an 8-pin SOIC surface mount package. It offers a maximum continuous drain current of 4.8 amperes and a drain-source voltage rating of 60 volts, making it suitable for demanding electronic power switching and amplification applications. The device operates in enhancement mode, providing high efficiency switching with a maximum drain-source resistance of 80 milliohms.
This MOSFET supports a wide temperature range from -55°C to +150°C, ensuring reliable operation in harsh industrial and automotive environments. The typical gate charge of 44 nanocoulombs at specified gate voltages enables rapid switching suitable for power management circuits. Its small footprint (5 mm length, 4 mm width, 1.5 mm height) fits compact PCB layouts efficiently.
Compliant with RoHS directives and tested to UL 94V-0 flammability standards, as well as military and automotive standards including MIL-STD-202 and AEC-Q101, this device is optimized for robust performance and long-term reliability. Dual MOSFET elements per chip provide added design flexibility in isolated switching circuits.
This Power MOSFET is commonly used in automotive electronics, power supply regulation, motor control, and industrial equipment where high performance, durability, and industry-standard certifications are required.
Maximum continuous drain current: 4.8 A. Maximum drain-source voltage: 60 V. Package type: 8-pin SOIC surface mount. Maximum drain-source resistance: 80 mΩ. Operating temperature range: -55°C to +150°C. Typical gate charge: 44 nC.
Standards: RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020.
Explore the extensive range of discrete semiconductor components available in EnvMart's Electronics & Electricals category to find compatible MOSFETs and power management solutions that meet your industrial and automotive PCB design requirements.
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Frequently Asked Questions
The maximum continuous drain current of this model is 4.8 amperes.
This unit has a maximum drain-source voltage rating of 60 volts.
It is packaged in an 8-pin SOIC surface mount form factor.
The maximum drain-source resistance is 80 milliohms, which supports efficient switching.
It operates within a temperature range from -55°C to +150°C.
The typical gate charge at Vgs is 44 nanocoulombs.
This model contains two P-Channel MOSFET elements per chip.
It complies with the AEC-Q101 automotive standard.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
It has been tested to UL 94V-0 flammability standards.
The maximum power dissipation is rated at 2.1 watts.
The maximum gate-source voltage is -20 to +20 volts.
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